Inventor · disambiguated record
Hui-Chuan Wang
Also filed as: WANG HUI-CHUAN
73 granted patents·10 pending applications·906 citations·filing 1997–2025
99Inventor score
Top patents by PatentIndex Score
83 records- 0197US7602033B2Low resistance tunneling magnetoresistive sensor with composite inner pinned layerHEADWAY TECHNOLOGIES INC·Filed 2007·Granted Oct 13, 2009·82 cites·20 claims
- 0296US8059374B2TMR device with novel free layer structureZHAO TONG·Filed 2009·Granted Nov 15, 2011·42 cites·20 claims
- 0396US7476954B2TMR device with Hf based seed layerHEADWAY TECHNOLOGIES INC·Filed 2007·Granted Jan 13, 2009·36 cites·20 claims
- 0495US7528457B2Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/RMAGIC TECHNOLOGIES INC·Filed 2006·Granted May 5, 2009·38 cites·13 claims
- 0595US7333306B2Magnetoresistive spin valve sensor with tri-layer free layerHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Feb 19, 2008·40 cites·34 claims
- 0694US8557407B2Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrierZHAO TONG·Filed 2010·Granted Oct 15, 2013·11 cites·7 claims
- 0794US8472151B2TMR device with low magnetorestriction free layerWANG HUI-CHUAN·Filed 2012·Granted Jun 25, 2013·15 cites·5 claims
- 0894US8202572B2TMR device with improved MgO barrierZHAO TONG·Filed 2010·Granted Jun 19, 2012·19 cites·20 claims
- 0994US7978439B2TMR or CPP structure with improved exchange propertiesHEADWAY TECHNOLOGIES INC·Filed 2007·Granted Jul 12, 2011·15 cites·12 claims
- 1094US7780820B2Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrierHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Aug 24, 2010·23 cites·12 claims
- 1194US6322640B1Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor elementHEADWAY TECHNOLOGIES INC·Filed 2000·Granted Nov 27, 2001·59 cites·17 claims
- 1293US8259420B2TMR device with novel free layer structureZHAO TONG·Filed 2010·Granted Sep 4, 2012·22 cites·22 claims
- 1393US8164862B2Seed layer for TMR or CPP-GMR sensorZHANG KUNLIANG·Filed 2008·Granted Apr 24, 2012·25 cites·21 claims
- 1493US7672088B2Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applicationsHEADWAY TECHNOLOGIES INC·Filed 2006·Granted Mar 2, 2010·27 cites·12 claims
- 1591US8337676B2Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrierZHAO TONG·Filed 2010·Granted Dec 25, 2012·8 cites·6 claims
- 1690US8456781B2TMR device with novel free layer structureZHAO TONG·Filed 2012·Granted Jun 4, 2013·11 cites·10 claims
- 1790US6449131B2Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereofHEADWAY TECHNOLOGIES INC·Filed 2001·Granted Sep 10, 2002·37 cites·6 claims
- 1889US6785954B2Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensorHEADWAY TECHNOLOGIES INC·Filed 2002·Granted Sep 7, 2004·23 cites·25 claims
- 1988US9040178B2TMR device with novel free layer structureZHAO TONG·Filed 2008·Granted May 26, 2015·13 cites·8 claims
- 2088US8289663B2Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layersZHANG KUNLIANG·Filed 2008·Granted Oct 16, 2012·8 cites·26 claims
- 2188US7111386B2Lead plating method for GMR head manufactureHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Sep 26, 2006·7 cites·8 claims
- 2287US8728333B2Method to fabricate small dimension devices for magnetic recording applicationsWANG HUI-CHUAN·Filed 2010·Granted May 20, 2014·8 cites·20 claims
- 2387US8339754B2TMR or CPP structure with improved exchange propertiesZHANG KUNLIANG·Filed 2011·Granted Dec 25, 2012·8 cites·11 claims
- 2487US8008740B2Low resistance tunneling magnetoresistive sensor with composite inner pinned layerHEADWAY TECHNOLOGIES INC·Filed 2009·Granted Aug 30, 2011·10 cites·2 claims
- 2587US7742261B2Tunneling magneto-resistive spin valve sensor with novel composite free layerHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Jun 22, 2010·6 cites·12 claims
- 2686US8921126B2Magnetic seed method for improving blocking temperature and shield to shield spacing in a TMR sensorHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Dec 30, 2014·5 cites·9 claims
- 2786US7986498B2TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layerHEADWAY TECHNOLOGIES INC·Filed 2009·Granted Jul 26, 2011·11 cites·19 claims
- 2886US7829963B2TMR device with Hf based seed layerHEADWAY TECHNOLOGIES INC·Filed 2009·Granted Nov 9, 2010·12 cites·10 claims
- 2985US9577184B2TMR device with novel free layer structureHEADWAY TECH INC·Filed 2015·Granted Feb 21, 2017·4 cites·12 claims
- 3085US9214170B2TMR device with low magnetostriction free layerHEADWAY TECHNOLOGIES INC·Filed 2015·Granted Dec 15, 2015·5 cites·8 claims
- 3184US7950136B2Process of making an improved AP1 layer for a TMR deviceHEADWAY TECHNOLOGIES INC·Filed 2008·Granted May 31, 2011·4 cites·10 claims
- 3284US7390530B2Structure and process for composite free layer in CPP GMR deviceHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Jun 24, 2008·15 cites·10 claims
- 3383US7564658B2CoFe insertion for exchange bias and sensor improvementHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Jul 21, 2009·16 cites·16 claims
- 3482US8747629B2TMR device with novel free layerWANG HUI-CHUAN·Filed 2008·Granted Jun 10, 2014·4 cites·6 claims
- 3582US7630176B2Seed layer for fabricating spin valve heads for ultra-high density recordingsHEADWAY TECHNOLOGIES INC·Filed 2007·Granted Dec 8, 2009·3 cites·10 claims
- 3681US7602590B2Tunneling magneto-resistive spin valve sensor with novel composite free layerHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Oct 13, 2009·10 cites·6 claims
- 3781US6129957AMethod of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applicationsHEADWAY TECHNOLOGIES INC·Filed 1999·Granted Oct 10, 2000·37 cites·34 claims
- 3880US8385027B2TMR device with novel free layer structureHEADWAY TECHNOLOGIES INC·Filed 2011·Granted Feb 26, 2013·4 cites·7 claims
- 3979US8865008B2Two step method to fabricate small dimension devices for magnetic recording applicationsHEADWAY TECHNOLOGIES INC·Filed 2012·Granted Oct 21, 2014·5 cites·20 claims
- 4078US9021685B2Two step annealing process for TMR device with amorphous free layerZHAO TONG·Filed 2008·Granted May 5, 2015·3 cites·10 claims
- 4178US7983011B2AP1 layer for TMR deviceHEADWAY TECHNOLOGIES INC·Filed 2008·Granted Jul 19, 2011·2 cites·18 claims
- 4278US7646568B2Ultra thin seed layer for CPP or TMR structureHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Jan 12, 2010·9 cites·16 claims
- 4378US7497007B2Process of manufacturing a TMR deviceHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Mar 3, 2009·7 cites·9 claims
- 4478US7234228B2Method of fabricating novel seed layers for fabricating spin valve headsHEADWAY TECHNOLOGIES INC·Filed 2002·Granted Jun 26, 2007·9 cites·10 claims
- 4576US7564660B2Seed layer for fabricating spin valve heads for ultra-high density recordingsHEADWAY TECHNOLOGIES INC·Filed 2007·Granted Jul 21, 2009·2 cites·9 claims
- 4676US6870711B1Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devicesHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Mar 22, 2005·17 cites·10 claims
- 4775US9281469B2Magnetic seed for improving blocking temperature and shield to shield spacing in a TMR sensorHEADWAY TECHNOLOGIES INC·Filed 2014·Granted Mar 8, 2016·2 cites·5 claims
- 4875US8105703B2Process for composite free layer in CPP GMR or TMR deviceWANG HUI-CHUAN·Filed 2008·Granted Jan 31, 2012·2 cites·9 claims
- 4975US7099125B2Easily manufactured exchange bias stabilization schemeHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Aug 29, 2006·2 cites·22 claims
- 5075US7050273B2Bottom spin valve sensor having a lead overlay (LOL) structure fabricated thereonHEADWAY TECHNOLOGIES INC·Filed 2004·Granted May 23, 2006·8 cites·18 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →