Inventor · disambiguated record
Huili Grace Xing
Also filed as: XING HUILI · XING HUILI GRACE
9 granted patents·4 pending applications·13 citations·filing 2005–2022
78Inventor score
Top patents by PatentIndex Score
13 records- 0183US7525130B2Polarization-doped field effect transistors (POLFETS) and materials and methods for making the sameUNIV CALIFORNIA·Filed 2005·Granted Apr 28, 2009·11 cites·28 claims
- 0282US10957817B2Polarization field assisted heterostructure design for efficient deep ultra-violet light emitting diodesUNIV CORNELL·Filed 2018·Granted Mar 23, 2021·2 cites·18 claims
- 0358US11043612B2Light emitting diodes using ultra-thin quantum heterostructuresUNIV CORNELL·Filed 2018·Granted Jun 22, 2021·0 cites·14 claims
- 0450US2024177042A1Integrated Quantum Computing with Epitaxial MaterialsUNIV CORNELL·Filed 2022·Application pending·0 cites
- 0545US12364060B2Bottom tunnel junction light-emitting field-effect transistorsUNIV CORNELL·Filed 2021·Granted Jul 15, 2025·0 cites·19 claims
- 0644US2022199782A1Integrated electronics on the aluminum nitride platformUNIV CORNELL·Filed 2021·Application pending·0 cites
- 0743US2022294189A1Monolithically inverted iii-v laser diode realized using buried tunnel junctionUNIV CORNELL·Filed 2020·Application pending·0 cites
- 0839US11894468B2High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating sameUNIV CORNELL·Filed 2019·Granted Feb 6, 2024·0 cites·22 claims
- 0939US11710785B2RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltagesUNIV CORNELL·Filed 2020·Granted Jul 25, 2023·0 cites·48 claims
- 1039US11522080B2High-voltage p-channel FET based on III-nitride heterostructuresUNIV CORNELL·Filed 2019·Granted Dec 6, 2022·0 cites·25 claims
- 1137US11158709B2Polarization-induced 2D hole gases for high-voltage p-channel transistorsUNIV CORNELL·Filed 2019·Granted Oct 26, 2021·0 cites·38 claims
- 1236US11476383B2Platforms enabled by buried tunnel junction for integrated photonic and electronic systemsUNIV CORNELL·Filed 2019·Granted Oct 18, 2022·0 cites·4 claims
- 1332US2017098716A1Two-dimensional heterojunction interlayer tunneling field effect transistorsUNIV NOTRE DAME DU LAC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →