Inventor · disambiguated record
Huai-Tei Yang
Also filed as: YANG HUAI-TEI
77 granted patents·12 pending applications·175 citations·filing 2000–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD75TAIWAN SEMICONDUCTOR MFG7LAI YI-JEN2HSU CHUN-YUAN1LEE EN-TING1
Top patents by PatentIndex Score
89 records- 0197US10680106B2Method of forming source/drain epitaxial stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·11 cites·20 claims
- 0297US10522359B2FinFET device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·14 cites·20 claims
- 0397US10510889B2P-type strained channel in a fin field effect transistor (FinFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·13 cites·20 claims
- 0495US10535523B1Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·12 cites·20 claims
- 0595US9899273B1Semiconductor structure with dopants diffuse protection and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·13 cites·20 claims
- 0693US11569383B2Method of forming source/drain epitaxial stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·2 cites·20 claims
- 0793US10535736B2Fully strained channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·6 cites·20 claims
- 0892US11195931B2Gate structure, semiconductor device and the method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·2 cites·20 claims
- 0991US9543387B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·13 cites·20 claims
- 1090US11222805B2Etching apparatus and methods of cleaning thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·2 cites·20 claims
- 1189US9722081B1FinFET device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·4 cites·18 claims
- 1288US12446255B2Semiconductor structure with source/drain multi-layer structure and method for forming the samePARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2024·Granted Oct 14, 2025·0 cites·16 claims
- 1387US10840358B2Method for manufacturing semiconductor structure with source/drain structure having modified shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·3 cites·20 claims
- 1486US11545363B2Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·1 cites·20 claims
- 1586US10468530B2Semiconductor structure with source/drain multi-layer structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·2 cites·20 claims
- 1685US12015055B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 18, 2024·0 cites·20 claims
- 1785US2024363350A1Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1884US8610270B2Semiconductor device and semiconductor assembly with lead-free solderLAI YI-JEN·Filed 2010·Granted Dec 17, 2013·8 cites·19 claims
- 1984US2024371941A1Fully strained channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2083US12021143B2P-type strained channel in a fin field effect transistor (FinFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 2183US11990550B2Semiconductor structure with source/drain multi-layer structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 2283US11233123B2Fully strained channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·1 cites·20 claims
- 2382US12170202B2Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 2482US10867799B2FinFET device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 2581US11742386B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 2681US2025297361A1Vacuum systems in semiconductor fabrication facilitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2781US2025299958A1Silicon intermixing layer for blocking diffusionTAIWAN SSEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2880US12021142B2Method of forming source/drain epitaxial stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·0 cites·20 claims
- 2980US8698217B2Metal shield structures in backside illumination image sensor chipsHSU CHUN-YUAN·Filed 2012·Granted Apr 15, 2014·4 cites·20 claims
- 3079US2024234548A1Method for manufacturing semiconductor structure with source/drain structure having modified shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3179US2024355663A1Etching apparatus and methods of cleaning thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3278US12490508B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 3378US12080761B2Fully strained channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 3478US11817499B2P-type strained channel in a fin field effect transistor (FinFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 3578US10631392B2EUV collector contamination preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·1 cites·20 claims
- 3678US10347720B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 9, 2019·1 cites·20 claims
- 3778US2025349609A1Etch stop layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3877US12394624B2Silicon intermixing layer for blocking diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 3976US11527655B2Semiconductor structure with source/drain multi-layer structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 4076US11450741B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·0 cites·20 claims
- 4176US6702900B2Wafer chuck for producing an inert gas blanket and method for usingTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 9, 2004·26 cites·9 claims
- 4275US12080582B2Etching apparatus and methods of cleaning thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 4375US11587791B2Silicon intermixing layer for blocking diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 21, 2023·1 cites·19 claims
- 4474US12371780B2Vacuum systems in semiconductor fabrication facilitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 4574US11854811B2FinFET device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 4673US11404574B2P-type strained channel in a fin field effect transistor (FinFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·0 cites·20 claims
- 4773US9931726B2Wafer edge trimming tool using abrasive tapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 3, 2018·2 cites·20 claims
- 4873US8541262B2Die edge contacts for semiconductor devicesLAI YI-JEN·Filed 2010·Granted Sep 24, 2013·3 cites·19 claims
- 4972US11227951B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
- 5071US11526073B2Pellicle and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 13, 2022·0 cites·20 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Huai-Tei Yang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →