Inventor · disambiguated record
Hung-Chang Yu
Also filed as: YU HUNG-CHANG
61 granted patents·5 pending applications·361 citations·filing 1998–2024
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD38TAIWAN SEMICONDUCTOR MFG14YU HUNG-CHANG8CHIH YUE-DER2LIN KAI CHUN2
Top patents by PatentIndex Score
66 records- 0198US12167613B2Circuit and method to enhance efficiency of memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·3 cites·20 claims
- 0298US9165629B2Method and apparatus for MRAM sense reference trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 20, 2015·61 cites·18 claims
- 0396US8687412B2Reference cell configuration for sensing resistance states of MRAM bit cellsCHIH YUE-DER·Filed 2012·Granted Apr 1, 2014·39 cites·19 claims
- 0495US11793000B2Circuit and method to enhance efficiency of memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
- 0593US10998024B2Method for enhancing tunnel magnetoresistance in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 4, 2021·3 cites·20 claims
- 0693US8902641B2Adjusting reference resistances in determining MRAM resistance statesCHIH YUE-DER·Filed 2012·Granted Dec 2, 2014·19 cites·19 claims
- 0793US8493776B1MRAM with current-based self-referenced read operationsYU HUNG-CHANG·Filed 2012·Granted Jul 23, 2013·22 cites·18 claims
- 0892US11532341B2Method for enhancing tunnel magnetoresistance in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·2 cites·20 claims
- 0991US8923040B2Accommodating balance of bit line and source line resistances in magnetoresistive random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 30, 2014·15 cites·20 claims
- 1090US8817553B2Charge pump control scheme using frequency modulation for memory word lineYU HUNG-CHANG·Filed 2011·Granted Aug 26, 2014·11 cites·19 claims
- 1190US8509003B2Read architecture for MRAMLIN KAI-CHUN·Filed 2011·Granted Aug 13, 2013·16 cites·23 claims
- 1289US9406367B2Method and apparatus for MRAM sense reference trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 2, 2016·8 cites·20 claims
- 1389US6366071B1Low voltage supply bandgap reference circuit using PTAT and PTVBE current sourceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 2, 2002·45 cites·20 claims
- 1488US2024389354A1Circuit and method to enhance efficiency of memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1588US2024389355A1Circuit and method to enhance efficiency of memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1686US9875774B1Memory device and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 23, 2018·5 cites·20 claims
- 1786US8964458B2Differential MRAM structure with relatively reversed magnetic tunnel junction elements enabling writing using same polarity currentLIN KAI-CHUN·Filed 2012·Granted Feb 24, 2015·13 cites·17 claims
- 1885US12376313B2Circuit and method to enhance efficiency of memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 1985US10950658B2Circuit and method to enhance efficiency of memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·20 claims
- 2085US7710182B2Reliable level shifter of ultra-high voltage device used in low power applicationCHARTERED SEMICONDUCTOR MFG·Filed 2008·Granted May 4, 2010·12 cites·22 claims
- 2181US10497407B2Memory device and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·3 cites·20 claims
- 2280US10372948B2Scrambling apparatus and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 6, 2019·3 cites·20 claims
- 2380US10147469B2Memory device and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 4, 2018·3 cites·20 claims
- 2480US9747159B2MRAM smart bit write algorithm with error correction parity bitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 29, 2017·3 cites·20 claims
- 2580US9110829B2MRAM smart bit write algorithm with error correction parity bitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 18, 2015·6 cites·18 claims
- 2679US12243608B2Method and memory device with increased read and write marginTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 4, 2025·0 cites·20 claims
- 2779US10163980B2Resistive memory array and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·2 cites·20 claims
- 2878US10366765B2Adjustment circuit for partitioned memory blockTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 30, 2019·3 cites·20 claims
- 2977US11031051B2Memory device with recycling arrangement for gleaned chargeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·2 cites·20 claims
- 3075US8654589B2Charge pump control scheme for memory word lineYU HUNG-CHANG·Filed 2010·Granted Feb 18, 2014·4 cites·18 claims
- 3174US12183379B2Enhancing tunnel magnetoresistance in memory device comprising a memory cell with a memory element coupled between a switch and a negative resistance deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·18 claims
- 3274US9413140B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·2 cites·20 claims
- 3374US9214931B2Sensing circuit with reduced bias clampTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·4 cites·17 claims
- 3474US8369180B2Memory word line boost using thin dielectric capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 5, 2013·4 cites·20 claims
- 3574US2023178120A1Memory device with charge-recycling arrangement and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3673US9368552B2Resistive memory array and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 14, 2016·2 cites·19 claims
- 3772US11901030B2Method and memory device with increased read and write marginTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 3872US9177621B2Fast bit-line pre-charge schemeYU HUNG-CHANG·Filed 2012·Granted Nov 3, 2015·4 cites·20 claims
- 3970US11574658B2Memory device with charge-recycling arrangementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 4067US8570792B2Magnetoresistive random access memoryCHIANG TIEN-WEI·Filed 2012·Granted Oct 29, 2013·2 cites·18 claims
- 4166US11404140B2Method and memory device with increased read and write marginTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·0 cites·17 claims
- 4266US8842489B2Fast-switching word line driverYU HUNG-CHANG·Filed 2012·Granted Sep 23, 2014·3 cites·21 claims
- 4365US9299677B2Package with multiple plane I/O structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 29, 2016·1 cites·20 claims
- 4464US10998058B2Adjustment circuit for partitioned memory blockTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 4, 2021·0 cites·20 claims
- 4561US10714535B2Resistive memory array and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·0 cites·20 claims
- 4660US6127853AHigh speed current-mode sense-amplifierTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 3, 2000·20 cites·5 claims
- 4755US9742497B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 22, 2017·0 cites·20 claims
- 4855US8908439B2Adaptive word-line boost driverTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 9, 2014·1 cites·20 claims
- 4954US10281942B2Low-dropout regulatorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·0 cites·20 claims
- 5054US9165613B2Sample-and-hold current sense amplifier and related methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·1 cites·20 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →