Inventor · disambiguated record
Hwichan Jun
Also filed as: JUN HWICHAN
21 granted patents·17 pending applications·56 citations·filing 2015–2024
93Inventor score
Top patents by PatentIndex Score
38 records- 0196US11670677B2Crossing multi-stack nanosheet structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 6, 2023·6 cites·20 claims
- 0296US11538814B2Static random access memory of 3D stacked devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 27, 2022·7 cites·20 claims
- 0396US11502167B2Semiconductor device having stepped multi-stack transistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 15, 2022·4 cites·20 claims
- 0493US10043800B2Integrated circuit device with gate line crossing fin-type active regionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 7, 2018·10 cites·20 claims
- 0591US11735585B2Stacked semiconductor device having mirror-symmetric patternSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·16 claims
- 0688US10964791B2Semiconductor device having silicides and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 30, 2021·5 cites·20 claims
- 0785US9536968B2Semiconductor devices including contact patterns having a rising portion and a recessed portionPARK SUNGIL·Filed 2015·Granted Jan 3, 2017·10 cites·20 claims
- 0883US10199471B2Semiconductor device with field effect transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 5, 2019·5 cites·18 claims
- 0981US10522537B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·15 claims
- 1072US11437369B2Array of multi-stack nanosheet structuresSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 6, 2022·0 cites·9 claims
- 1171US12087815B2Crossing multi-stack nanosheet structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·11 claims
- 1271US12057448B2Stacked semiconductor device having mirror-symmetric patternSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 6, 2024·0 cites·4 claims
- 1371US10453838B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 22, 2019·1 cites·20 claims
- 1469US11742345B2Method of forming an array of multi-stack nanosheet structures having a dam structure isolating multi-stack transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·11 claims
- 1568US11935922B2Semiconductor device having stepped multi-stack transistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·14 claims
- 1667US9754936B2Semiconductor device and method of fabricating the samePARK SUEHYE·Filed 2016·Granted Sep 5, 2017·3 cites·19 claims
- 1766US2025294827A1Co-integration of gate-all-around devices with different numbers of nanoribbonsINTEL CORP·Filed 2024·Application pending·0 cites
- 1862US2025311426A1Conductive via through a fin isolation structure between semiconductor devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 1961US2025294846A1Backside cross-couple interconnectsINTEL CORP·Filed 2024·Application pending·0 cites
- 2060US11538913B2Semiconductor device having silicides and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 2159US2025294866A1Gate cut confined within gate trenchINTEL CORP·Filed 2024·Application pending·0 cites
- 2259US2025204009A1Extreme ultraviolet (euv) gate patterning of varying gate lengthsINTEL CORP·Filed 2023·Application pending·0 cites
- 2359US2025212471A1Backside logic interconnectsINTEL CORP·Filed 2023·Application pending·0 cites
- 2458US10636785B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 28, 2020·0 cites·20 claims
- 2558US2025372384A1Self-aligned gate cutINTEL CORP·Filed 2024·Application pending·0 cites
- 2658US2025113581A1Trench contact structure with airgap spacerINTEL CORP·Filed 2023·Application pending·0 cites
- 2758US2025372505A1Planar and 3d capacitors in interconnect regionINTEL CORP·Filed 2024·Application pending·0 cites
- 2858US2025112150A1Integrated circuit structures having registration marks for dual-sided devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 2957US11968818B2SRAM memory cell for stacked transistors with different channel widthSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·20 claims
- 3055US2024204048A1Epitaxial source or drain region with a wrapped conductive contactINTEL CORP·Filed 2022·Application pending·0 cites
- 3154US2024186327A1Gate-all-around devices with different gate oxide thicknessesINTEL CORP·Filed 2022·Application pending·0 cites
- 3254US2024194673A1Integration of finfet and gate-all-around devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 3353US11133392B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·14 claims
- 3453US2024421002A1Integrated circuit device with multi-length gate electrodeINTEL CORP·Filed 2023·Application pending·0 cites
- 3553US2025204008A1Conductive interconnect structure within gate cutINTEL CORP·Filed 2023·Application pending·0 cites
- 3652US11569232B2Semiconductor device including self-aligned gate structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 3752US2025311298A1Gate-all-around transistor without cavity spacer structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 3849US2024213324A1Elongated contact for source or drain regionINTEL CORP·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →