Inventor · disambiguated record
Hyun-Geun Byun
Also filed as: BYUN HYUN-GEUN · BYUN HYUN-KUN
9 granted patents·147 citations·filing 1991–2010
89Inventor score
Files withSAMSUNG ELECTRONICS CO LTD9
Top patents by PatentIndex Score
9 records- 0193US7427531B2Phase change memory devices employing cell diodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 23, 2008·27 cites·30 claims
- 0289US7582941B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 1, 2009·14 cites·6 claims
- 0383US6594818B2Memory architecture permitting selection of storage density after fabrication of active circuitrySAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 15, 2003·34 cites·26 claims
- 0479US7151696B2Integrated circuit memory devices having hierarchical bit line selection circuits thereinSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 19, 2006·8 cites·22 claims
- 0574US5297085ASemiconductor memory device with redundant block and cell arraySAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Mar 22, 1994·44 cites·32 claims
- 0664US8043869B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 25, 2011·2 cites·10 claims
- 0763US7994493B2Phase change memory devices employing cell diodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 9, 2011·4 cites·81 claims
- 0852US5754487ABit line precharge circuitSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 19, 1998·14 cites·12 claims
- 0944US7851878B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Dec 14, 2010·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →