Inventor · disambiguated record
Hyunsang Hwang
Also filed as: HWANG HYUNSANG
10 granted patents·8 pending applications·189 citations·filing 1995–2025
88Inventor score
Files withSAMSUNG ELECTRONICS CO LTD4GOLD STAR ELECTRONICS3HPSP CO LTD2HWANG HYUNSANG2POSTECH ACAD IND FOUND2
Top patents by PatentIndex Score
18 records- 0184US9269901B2Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the sameHWANG HYUNSANG·Filed 2013·Granted Feb 23, 2016·7 cites·20 claims
- 0282US5843812AMethod of making a PMOSFET in a semiconductor deviceGOLD STAR ELECTRONICS·Filed 1997·Granted Dec 1, 1998·71 cites·19 claims
- 0379US5512519AMethod of forming a silicon insulating layer in a semiconductor deviceGOLD STAR ELECTRONICS·Filed 1995·Granted Apr 30, 1996·62 cites·18 claims
- 0477US10418417B1Multi-level synaptic weight device of vertical cross-point structure in three dimension and fabrication thereofSK HYNIX INC·Filed 2018·Granted Sep 17, 2019·5 cites·20 claims
- 0572US5468665AProcess for making a semiconductor MOS transistor employing a temporary spacerGOLD STAR ELECTRONICS·Filed 1995·Granted Nov 21, 1995·34 cites·24 claims
- 0665US7449398B2Methods of forming silicon nano-crystals using plasma ion implantation and semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·2 cites·20 claims
- 0761US12144185B2Method of making ovonic threshold switch selectors using microwave annealingWESTERN DIGITAL TECH INC·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 0861US2025142826A1Method for manufacturing three-dimensional nand flash memory arrayHPSP CO LTD·Filed 2024·Application pending·0 cites
- 0961US2025318025A1Microwave-based heating devicePOSTECH RES & BUSINESS DEV FOUND·Filed 2025·Application pending·0 cites
- 1059US2025120095A1Semiconductor device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1158US9178023B2Two terminal switching device having bipolar switching property, method of fabricating the same, and resistive memory cross-point array having the samePostech Academy—Industry Foundation·Filed 2014·Granted Nov 3, 2015·2 cites·21 claims
- 1258US2023385621A1Apparatus for implementing hardware-based dropout for artificial neural network using selector element and neural network circuit system using the samePOSTECH ACAD IND FOUND·Filed 2023·Application pending·0 cites
- 1355US2025081865A1Memory device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1454US2025203915A1Semiconductor device and method for manufacturing semiconductor deviceHPSP CO LTD·Filed 2023·Application pending·0 cites
- 1554US2022351035A1Apparatus and method for neural network learning using synapse based on multi elementPOSTECH ACAD IND FOUND·Filed 2021·Application pending·0 cites
- 1636US2005247970A1Memory device including a dielectric multilayer structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1735US5573974AMethod for isolating semiconductor elementsLG SEMICON CO LTD·Filed 1995·Granted Nov 12, 1996·6 cites·5 claims
- 1833US9324944B2Selection device and nonvolatile memory cell including the same and method of fabricating the sameHWANG HYUNSANG·Filed 2013·Granted Apr 26, 2016·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →