Inventor · disambiguated record
Hyun-Sang Hwang
Also filed as: HWANG HYUN S · HWANG HYUN-SANG
31 granted patents·13 pending applications·629 citations·filing 1993–2023
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD12HWANG HYUN-SANG5LG SEMICON CO LTD5GOLD STAR ELECTRONICS4INTELLECTUAL DISCOVERY CO LTD3
Top patents by PatentIndex Score
44 records- 0197US8009454B2Resistance random access memory device and a method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 30, 2011·67 cites·10 claims
- 0291US5364807AMethod for fabricating LDD transitor utilizing halo implantGOLD STAR ELECTRONICS·Filed 1993·Granted Nov 15, 1994·90 cites·3 claims
- 0390US7456468B2Semiconductor device including high-k insulating layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 25, 2008·16 cites·7 claims
- 0490US6913961B2Method of manufacturing high-k gate dielectric by use of annealing in high-pressure hydrogen atmosphereKWANGJU INST SCI & TECH·Filed 2004·Granted Jul 5, 2005·51 cites·1 claims
- 0590US5459091AMethod for fabricating a non-volatile memory deviceGOLD STAR ELECTRONICS·Filed 1993·Granted Oct 17, 1995·84 cites·2 claims
- 0686US9117513B2Resistive RAM, method for fabricating the same, and method for driving the sameHWANG HYUN-SANG·Filed 2012·Granted Aug 25, 2015·10 cites·6 claims
- 0786US8116116B2Resistance RAM having oxide layer and solid electrolyte layer, and method for operating the sameHWANG HYUN SANG·Filed 2009·Granted Feb 14, 2012·18 cites·9 claims
- 0884US9224946B2Three-terminal synapse device and method of operating the sameKIM YOUNG-BAE·Filed 2014·Granted Dec 29, 2015·8 cites·3 claims
- 0983US5576226AMethod of fabricating memory device using a halogen implantLG SEMICON CO LTD·Filed 1994·Granted Nov 19, 1996·87 cites·4 claims
- 1079US5684317AMOS transistor and method of manufacturing thereofLG SEMICON CO LTD·Filed 1995·Granted Nov 4, 1997·51 cites·8 claims
- 1176US7420256B2Nonvolatile semiconductor memory device having a gate stack and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 2, 2008·18 cites·34 claims
- 1273US9214631B2Resistive RAM, method for fabricating the same, and method for driving the sameSK HYNIX INC·Filed 2015·Granted Dec 15, 2015·3 cites·9 claims
- 1370US5445982AMethod of fabricating nonvolatile semiconductor memory deviceGOLD STAR ELECTRONICS·Filed 1994·Granted Aug 29, 1995·28 cites·6 claims
- 1469US12233501B2Substrate support deviceTES CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·16 claims
- 1567US8546861B2Resistance change memory device with three-dimensional structure, and device array, electronic product and manufacturing method thereforHWANG HYUN-SANG·Filed 2009·Granted Oct 1, 2013·6 cites·18 claims
- 1666US6087237AMethod of manufacturing a MOSFET by forming a single oxide layer doping with either an oxide accelerator or an oxide inhibitor producing asymmetric thicknessLG SEMICON CO LTD·Filed 1997·Granted Jul 11, 2000·27 cites·27 claims
- 1765US9231198B2Resistance-variable memory device including carbide-based solid electrolyte membrane and manufacturing method thereofHWANG HYUN-SANG·Filed 2009·Granted Jan 5, 2016·3 cites·9 claims
- 1862US6077736AMethod of fabricating a semiconductor deviceLG SEMICON CO LTD·Filed 1996·Granted Jun 20, 2000·21 cites·26 claims
- 1959US12349606B2Three-terminal synaptic deviceHYUNDAI MOTOR CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·6 claims
- 2059US7670916B2Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 2, 2010·1 cites·10 claims
- 2159US5793080ANonvolatile memory deviceLG SEMICON CO LTD·Filed 1996·Granted Aug 11, 1998·19 cites·11 claims
- 2258US7358137B2Memory devices including barrier layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 15, 2008·1 cites·17 claims
- 2356US9208869B2Resistive RAM, method for fabricating the same, and method for driving the sameSK HYNIX INC·Filed 2015·Granted Dec 8, 2015·1 cites·5 claims
- 2456US2022366227A1Neuromorphic device and unit synapse device forming the samePOSTECH RES & BUSINESS DEV FOUND·Filed 2022·Application pending·0 cites
- 2555US8902632B2Hybrid resistive memory devices and methods of operating and manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Dec 2, 2014·1 cites·15 claims
- 2654US5395780AProcess for fabricating MOS transistorGOLD STAR ELECTRONICS·Filed 1993·Granted Mar 7, 1995·15 cites·9 claims
- 2753US11962321B2Analog-stochastic converter for converting analog signal into probability signal based on threshold switching elementPOSTECH RES & BUSINESS DEV FOUND·Filed 2021·Granted Apr 16, 2024·0 cites·14 claims
- 2852US12250890B2Two-terminal atom-based switching device and manufacturing method thereofPOSTECH RES & BUSINESS DEV FOUND·Filed 2022·Granted Mar 11, 2025·0 cites·4 claims
- 2952US6797645B2Method of fabricating gate dielectric for use in semiconductor device having nitridation by ion implantationKWANGJU INST SCI & TECH·Filed 2002·Granted Sep 28, 2004·3 cites·5 claims
- 3051US2014291599A1Resistive random access memoryINTELLECTUAL DISCOVERY CO LTD·Filed 2014·Application pending·0 cites
- 3151US2014291598A1Resistive random access memoryINTELLECTUAL DISCOVERY CO LTD·Filed 2014·Application pending·0 cites
- 3249US2009068808A1Method of manufacturing a nonvolatile semiconductor memory device having a gate stackSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3348US7531865B2Semiconductor device doped with Sb, Ga or Bi and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·0 cites·6 claims
- 3444US2006192246A1Semiconductor memory device that uses metal nitride as trap site and method of manufacturing the sameJEON SANG-HUN·Filed 2006·Application pending·0 cites
- 3544US2013026435A1Switching device and resistance change memory device using the sameYI JAE-YUN·Filed 2011·Application pending·0 cites
- 3641US2008166890A1High Pressure Hydrogen Annealing for MosfetHWANG HYUN-SANG·Filed 2006·Application pending·0 cites
- 3740US2023048278A1Neuromorphic hardware apparatus based on a resistive memory arrayHYUNDAI MOTOR CO LTD·Filed 2022·Application pending·0 cites
- 3837US9633727B2Resistive memory devices and methods of controlling resistive memory devices according to selected pulse power specificationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 25, 2017·0 cites·20 claims
- 3937US2013300509A1Frequency tuning apparatus, operating method thereof, and rf circuit including the frequency tuning apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 4036US2016163979A1Resistive memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 4136US2015221701A1Memory device and memory cell arraySAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 4235US2015162383A1Vertical resistive random access memory device, and method for manufacturing sameINTELLECTUAL DISCOVERY CO LTD·Filed 2013·Application pending·0 cites
- 4334US2015154469A1Pattern recognition method and apparatus for the samePOSTECH ACAD IND FOUND·Filed 2014·Application pending·0 cites
- 4428US7528039B2Method of fabricating flash memoryPOONGSAN MICROTEC CO LTD·Filed 2008·Granted May 5, 2009·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →