Inventor · disambiguated record
Hyung-Soon Jang
Also filed as: JANG HYUNG SOON
12 granted patents·1 pending application·95 citations·filing 2007–2020
92Inventor score
Top patents by PatentIndex Score
13 records- 0197US9240411B1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 19, 2016·14 cites·30 claims
- 0296US9698264B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 4, 2017·12 cites·19 claims
- 0396US9515182B2High-integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 6, 2016·11 cites·29 claims
- 0496US9461173B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 4, 2016·10 cites·20 claims
- 0596US9048219B2High integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 2, 2015·20 cites·30 claims
- 0695US9502417B2Semiconductor device having a substrate including a first active region and a second active regionSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 22, 2016·8 cites·30 claims
- 0794US10084088B2Method for fabricating a semiconductor device having a first fin active pattern and a second fin active patternSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 25, 2018·7 cites·17 claims
- 0891US9209184B2High-integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 8, 2015·5 cites·20 claims
- 0977US9536881B2Semiconductor devices having fin shaped channelsMAEDA SHIGENOBU·Filed 2014·Granted Jan 3, 2017·4 cites·10 claims
- 1074US11581435B2Semiconductor device including a first fin active region, a second fin active region and a field regionSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 14, 2023·0 cites·19 claims
- 1168US7871829B2Metal wiring of semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 18, 2011·4 cites·22 claims
- 1266US10714614B2Semiconductor device including a first fin active region and a second fin active regionSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 14, 2020·0 cites·19 claims
- 1340US2022415362A1System for providing customized video producing service using cloud-based voice combiningJANG HYUNG SOON·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →