Inventor · disambiguated record
Hyun Dam Jeong
Also filed as: JEONG HYUN D · JEONG HYUN DAM
23 granted patents·12 pending applications·178 citations·filing 2000–2023
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD16SAMSUNG CORNING CO LTD8JANG HYUNG WOOK3JEONG HYUN D2JANG EUN-JOO1
Top patents by PatentIndex Score
35 records- 0190US6485815B1Multi-layered dielectric layer including insulating layer having Si-CH3 bond therein and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 26, 2002·35 cites·9 claims
- 0289US7338689B2Composition for forming low dielectric thin film including siloxane monomer or siloxane polymer having only one type of stereoisomer and method of producing low dielectric thin film using sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 4, 2008·9 cites·27 claims
- 0386US7989361B2Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 2, 2011·11 cites·14 claims
- 0485US9514379B2Sensing device and method used for virtual golf simulation apparatusPARK HYUN JIN·Filed 2012·Granted Dec 6, 2016·7 cites·14 claims
- 0584US8501595B2Thin film containing nanocrystal particles and method for preparing the sameJANG EUN JOO·Filed 2006·Granted Aug 6, 2013·10 cites·12 claims
- 0684US6660822B2Method for forming insulating film between interconnect layers in microelectronic devicesSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 9, 2003·34 cites·14 claims
- 0784US6623711B2Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 23, 2003·30 cites·17 claims
- 0882US9333412B2Virtual golf simulation apparatus and method and sensing device and method used for the sameJANG HYUNG WOOK·Filed 2012·Granted May 10, 2016·9 cites·6 claims
- 0972US8053173B2Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 8, 2011·1 cites·17 claims
- 1069US9333409B2Virtual golf simulation apparatus and sensing device and method used for the sameJANG HYUNG WOOK·Filed 2012·Granted May 10, 2016·3 cites·14 claims
- 1164US7108922B2Siloxane-based resin and interlayer insulating film formed using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 19, 2006·10 cites·10 claims
- 1260US7867574B2Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 11, 2011·0 cites·5 claims
- 1359US7470634B2Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxaneSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 30, 2008·4 cites·25 claims
- 1458US9162132B2Virtual golf simulation apparatus and sensing device and method used for the sameJANG HYUNG WOOK·Filed 2012·Granted Oct 20, 2015·2 cites·12 claims
- 1555US7019099B2Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 28, 2006·4 cites·11 claims
- 1653US7750176B2Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compoundSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 6, 2010·0 cites·8 claims
- 1753US7582718B2Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 1, 2009·1 cites·1 claims
- 1852US2024228518A1Novel organotin silicate compounds, preparation methods thereof and photoresist composition containing the sameJSI SILICONE CO·Filed 2023·Application pending·0 cites
- 1948US7576230B2Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 18, 2009·2 cites·11 claims
- 2047US8252883B2Organosilicon nanocluster, method of preparing the same and method of forming thin film using the sameSEON JONG BAEK·Filed 2007·Granted Aug 28, 2012·0 cites·23 claims
- 2146US6962855B2Method of forming a porous material layer in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 8, 2005·6 cites·20 claims
- 2246US2006175685A1Composition for forming low-dielectric constant film comprising fullerene, low-dielectric constant film formed from the composition and method for forming the low-dielectric constant filmSAMSUNG CORNING CO LTD·Filed 2006·Application pending·0 cites
- 2346US2013079484A1Organic-inorganic hybrid polymer having quantum well structuresJEONG HYUN-DAM·Filed 2012·Application pending·0 cites
- 2444US7491785B2Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 17, 2009·0 cites·7 claims
- 2542US2006159938A1Composition for forming low dielectric thin film comprising polymer nanoparticles and method of preparing low dielectric thin film using the sameSAMSUNG CORNING CO LTD·Filed 2006·Application pending·0 cites
- 2642US2006046079A1Method for preparing surfactant-templated, mesoporous low dielectric filmSAMSUNG CORNING CO LTD·Filed 2005·Application pending·0 cites
- 2742US2006145306A1Composition for forming low dielectric thin film comprising porous nanoparticles and method of preparing low dielectric thin film using the sameSAMSUNG CORNING CO LTD·Filed 2005·Application pending·0 cites
- 2842US2006134441A1Siloxane-based polymer and method for forming dielectric film using the polymerSAMSUNG CORNING CO LTD·Filed 2005·Application pending·0 cites
- 2942US2006110940A1Method of preparing mesoporous thin film having low dielectric constantSAMSUNG CORNING CO LTD·Filed 2005·Application pending·0 cites
- 3042US2006063012A1Method for preparing low dielectric constant film by using dual organic siloxane precursorSAMSUNG CORNING CO LTD·Filed 2005·Application pending·0 cites
- 3142US2006115658A1Method of producing porous low dielectric thin filmSAMSUNG CORNING CO LTD·Filed 2005·Application pending·0 cites
- 3241US7633087B2Semiconductor thin film using self-assembled monolayers and methods of production thereofSAMSUNG CORNING PREC GLASS CO·Filed 2006·Granted Dec 15, 2009·0 cites·10 claims
- 3341US6777322B2Method for fabricating a multi-layered dielectric layer including insulating layer having Si-CH3 bond thereinSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 17, 2004·0 cites·9 claims
- 3440US2007090346A1Porous chalcogenide thin film, method for preparing the same and electronic device using the sameJEONG HYUN D·Filed 2006·Application pending·0 cites
- 3536US2007166645A1Chalcogenide precursor compound and method for preparing chalcogenide thin film using the sameJEONG HYUN D·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →