Inventor · disambiguated record
Hyeon-Seag Kim
Also filed as: KIM HYEON-SEAG
34 granted patents·3 pending applications·1,127 citations·filing 1999–2004
98Inventor score
Top patents by PatentIndex Score
37 records- 0197US6624488B1Epitaxial silicon growth and usage of epitaxial gate insulator for low power, high performance devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 23, 2003·158 cites·3 claims
- 0297US6284626B1Angled nitrogen ion implantation for minimizing mechanical stress on side walls of an isolation trenchVANTIS CORP·Filed 1999·Granted Sep 4, 2001·289 cites·9 claims
- 0395US6365450B1Fabrication of P-channel field effect transistor with minimized degradation of metal oxide gateADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 2, 2002·124 cites·15 claims
- 0491US6621114B1MOS transistors with high-k dielectric gate insulator for reducing remote scatteringADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 16, 2003·60 cites·14 claims
- 0590US6660588B1High density floating gate flash memory and fabrication processes thereforADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 9, 2003·50 cites·49 claims
- 0686US6873932B1Method and apparatus for predicting semiconductor device lifetimeADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 29, 2005·33 cites·27 claims
- 0785US6455912B1Process for manufacturing shallow trenches filled with dielectric material having low mechanical stressVANTIS CORP·Filed 2000·Granted Sep 24, 2002·34 cites·15 claims
- 0885US6297128B1Process for manufacturing shallow trenches filled with dielectric material having low mechanical stressVANTIS CORP·Filed 1999·Granted Oct 2, 2001·65 cites·28 claims
- 0983US6617179B1Method and system for qualifying an ONO layer in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 9, 2003·32 cites·12 claims
- 1079US6376323B1Fabrication of gate of P-channel field effect transistor with added implantation before patterning of the gateADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 23, 2002·26 cites·18 claims
- 1177US7155359B1Determination of device failure characteristicADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 26, 2006·20 cites·13 claims
- 1277US6812514B1High density floating gate flash memory and fabrication processes thereforADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·19 cites·20 claims
- 1376US6693009B1Flash memory cell with minimized floating gate to drain/source overlap for minimizing charge leakageADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 17, 2004·25 cites·20 claims
- 1475US6133164AFabrication of oxide regions having multiple thicknesses using minimized number of thermal cyclesVANTIS CORP·Filed 1999·Granted Oct 17, 2000·36 cites·12 claims
- 1574US6534363B2High voltage oxidation method for highly reliable flash memory devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 18, 2003·17 cites·20 claims
- 1674US6475863B1Method for fabricating self-aligned gate of flash memory cellADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 5, 2002·19 cites·21 claims
- 1772US6897476B1Test structure for determining electromigration and interlayer dielectric failureADVANCED MICRO DEVICES INC·Filed 2003·Granted May 24, 2005·15 cites·9 claims
- 1872US6825684B1Hot carrier oxide qualification methodADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 30, 2004·14 cites·9 claims
- 1969US6784061B1Process to improve the Vss line formation for high density flash memory and related structure associated therewithADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 31, 2004·14 cites·25 claims
- 2068US6642106B1Method for increasing core gain in flash memory device using strained siliconADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 4, 2003·11 cites·7 claims
- 2165US6734028B1Method of detecting shallow trench isolation corner thinning by electrical stressADVANCED MICRO DEVICES INC·Filed 2002·Granted May 11, 2004·9 cites·16 claims
- 2257US6929963B1Semiconductor component and method of manufacture and monitoringADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 16, 2005·7 cites·17 claims
- 2353US6909293B2Space-saving test structures having improved capabilitiesADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 21, 2005·5 cites·20 claims
- 2453US6831451B1Method for adjusting a Weibull slope for variations in temperature and bias voltageADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 14, 2004·5 cites·20 claims
- 2553US6806696B1Method for determining a Weibull slope having a bias voltage variation adjustmentADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 19, 2004·7 cites·20 claims
- 2653US6762463B2MOSFET with SiGe source/drain regions and epitaxial gate dielectricADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 13, 2004·5 cites·15 claims
- 2752US6646326B1Method and system for providing source/drain-gate spatial overlap engineering for low-power devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 11, 2003·5 cites·15 claims
- 2851US6509202B1Method and system for qualifying an ONO layer in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 21, 2003·5 cites·7 claims
- 2950US6856160B1Maximum VCC calculation method for hot carrier qualificationADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 15, 2005·4 cites·9 claims
- 3049US6514822B2Method and system for reducing thinning of field isolation structures in a flash memory deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 4, 2003·3 cites·6 claims
- 3144US6737876B1Method and system for determining an operating voltage using a source/drain to gate overlap induced scaling factorADVANCED MICRO DEVICES INC·Filed 2002·Granted May 18, 2004·2 cites·15 claims
- 3242US6784682B1Method of detecting shallow trench isolation corner thinning by electrical trappingADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 31, 2004·1 cites·20 claims
- 3342US6413826B2Gate insulator process for nanometer MOSFETSVANTIS CORP·Filed 1999·Granted Jul 2, 2002·7 cites·8 claims
- 3440US6861696B1Structure and method for a two-bit memory cellADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 1, 2005·1 cites·15 claims
- 3537US2004173803A1Interconnect structure having improved stress migration reliabilityADVANCED MICRO DEVICES INC·Filed 2003·Application pending·0 cites
- 3634US2003011395A1Method and system for determing an operating voltage using a STI induced scaling factorFiled 2001·Application pending·0 cites
- 3730US2002019143A1Farication of high quality oxides by controlling spacing between semiconductor wafers during processingFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →