Inventor · disambiguated record
Hyeongnam Kim
Also filed as: KIM HYEONGNAM
11 granted patents·6 pending applications·5 citations·filing 2015–2024
81Inventor score
Top patents by PatentIndex Score
17 records- 0190US11575377B2Switching circuit, gate driver and method of operating a transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Feb 7, 2023·2 cites·19 claims
- 0283US11251294B2High voltage blocking III-V semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Feb 15, 2022·2 cites·7 claims
- 0373US11916068B2Type III-V semiconductor substrate with monolithically integrated capacitorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Feb 27, 2024·0 cites·13 claims
- 0465US12471348B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Nov 11, 2025·0 cites·15 claims
- 0564US11545485B2Type III-V semiconductor substrate with monolithically integrated capacitorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jan 3, 2023·0 cites·13 claims
- 0664US2023139374A1Switching circuit, gate driver for a group iii nitride-based enhancement mode transistor device and method of operating the group iii nitride-based enhancement mode transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 0762US10211329B2Charge trapping prevention III-Nitride transistorINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Feb 19, 2019·1 cites·18 claims
- 0860US11923448B2High voltage blocking III-V semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Mar 5, 2024·0 cites·13 claims
- 0956US12349389B2Lateral III/V heterostructure field effect transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jul 1, 2025·0 cites·15 claims
- 1056US2024088138A1Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 1154US12040302B2Device package having a lateral power transistor with segmented chip padINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jul 16, 2024·0 cites·15 claims
- 1251US2025317139A1Transistor device having a capacitive voltage divider circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1349US12408364B2Hole draining structure for suppression of hole accumulationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Sep 2, 2025·0 cites·5 claims
- 1449US2016005816A1Group III-V Transistor with Voltage Controlled SubstrateINT RECTIFIER CORP·Filed 2015·Application pending·0 cites
- 1549US2016005845A1Group III-V Transistor Utilizing a Substrate Having a Dielectrically-Filled RegionINT RECTIFIER CORP·Filed 2015·Application pending·0 cites
- 1649US2016005821A1Group III-V Lateral Transistor with Backside ContactINT RECTIFIER CORP·Filed 2015·Application pending·0 cites
- 1742US11862630B2Semiconductor device having a bidirectional switch and discharge circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jan 2, 2024·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →