Inventor · disambiguated record
Hyong-Yong Lee
Also filed as: LEE HYONG Y · LEE HYONG-YONG
17 granted patents·1 pending application·134 citations·filing 1994–2017
93Inventor score
Top patents by PatentIndex Score
18 records- 0193US8758552B2Debonders and related devices and methods for semiconductor fabricationCANALE STEVE·Filed 2010·Granted Jun 24, 2014·17 cites·25 claims
- 0292US9296194B2Debonders and related devices and methods for semiconductor fabricationSKYWORKS SOLUTIONS INC·Filed 2014·Granted Mar 29, 2016·11 cites·20 claims
- 0387US9533484B2Debonders with a recess and a heater for semiconductor fabricationSKYWORKS SOLUTIONS INC·Filed 2016·Granted Jan 3, 2017·4 cites·20 claims
- 0486US9576838B2Devices for methodologies related to wafer carriersSKYWORKS SOLUTIONS INC·Filed 2015·Granted Feb 21, 2017·4 cites·20 claims
- 0584US9865491B2Devices for methodologies related to wafer carriersSKYWORKS SOLUTIONS INC·Filed 2017·Granted Jan 9, 2018·3 cites·20 claims
- 0684US6252441B1Synchronous data sampling circuitSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 26, 2001·38 cites·19 claims
- 0774US7426153B2Clock-independent mode register setting methods and apparatusesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 16, 2008·9 cites·20 claims
- 0872US9539801B2Debonders with a recess and a side wall opening for semiconductor fabricationSKYWORKS SOLUTIONS INC·Filed 2016·Granted Jan 10, 2017·1 cites·20 claims
- 0970US8036052B2Semiconductor memory device and test method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 11, 2011·8 cites·9 claims
- 1065US7551499B2Semiconductor memory device capable of performing low-frequency test operation and method for testing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 23, 2009·6 cites·19 claims
- 1164US7525339B2Semiconductor memory device testing on/off state of on-die-termination circuit during data read mode, and test method of the state of on-die-termination circuitSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 28, 2009·4 cites·44 claims
- 1261US6396754B1Semiconductor memory device which controls sense amplifier for detecting bit line bridge and method of controlling the semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 28, 2002·16 cites·14 claims
- 1346US5594262AElevated temperature gallium arsenide field effect transistor with aluminum arsenide to aluminum gallium arsenide mole fractioned buffer layerUS ARMY·Filed 1995·Granted Jan 14, 1997·11 cites·12 claims
- 1443US7791960B2Semiconductor memory device and control signal generating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 7, 2010·1 cites·13 claims
- 1543US2010169518A1Semiconductor memory deviceLEE HYONG-YONG·Filed 2009·Application pending·0 cites
- 1635US7030635B2Device for measuring supply voltage and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 18, 2006·1 cites·24 claims
- 1729US8243540B2Semiconductor memory device and test method thereofLEE HYONG-YONG·Filed 2011·Granted Aug 14, 2012·0 cites·5 claims
- 1824US5411902AProcess for improving gallium arsenide field effect transistor performance using an aluminum arsenide or an aluminum gallium arsenide buffer layerUS ARMY·Filed 1994·Granted May 2, 1995·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →