Inventor · disambiguated record
Hyuk-Ju Ryu
Also filed as: RYU HYUK · RYU HYUK-JU
14 granted patents·5 pending applications·129 citations·filing 2002–2022
91Inventor score
Top patents by PatentIndex Score
19 records- 0187US7323420B2Method for manufacturing multi-thickness gate dielectric layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 29, 2008·11 cites·9 claims
- 0285US7348636B2CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 25, 2008·11 cites·5 claims
- 0384US6855641B2CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 15, 2005·31 cites·21 claims
- 0482US6548862B2Structure of semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 15, 2003·24 cites·15 claims
- 0574US7285831B2CMOS device with improved performance and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 23, 2007·6 cites·20 claims
- 0670US7179750B2Method for manufacturing multi-thickness gate dielectric layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 20, 2007·11 cites·11 claims
- 0769US7008835B2Method of manufacturing a semiconductor device having a gate structure with low parasitic capacitanceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 7, 2006·13 cites·10 claims
- 0868US6858907B2Method of fabricating semiconductor device having notched gateSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 22, 2005·14 cites·19 claims
- 0962US7332400B2Method of manufacturing a semiconductor device having a gate structure with low parasitic capacitanceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·2 cites·13 claims
- 1060US6764910B2Structure of semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 20, 2004·6 cites·22 claims
- 1155US12431327B2Stroboscopic electron-beam signal image mappingINTEL CORP·Filed 2022·Granted Sep 30, 2025·0 cites·22 claims
- 1253US12237388B2Transistor arrangements with stacked trench contacts and gate strapsINTEL CORP·Filed 2020·Granted Feb 25, 2025·0 cites·20 claims
- 1349US2008032483A1Trench isolation methods of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1448US11145732B2Field-effect transistors with dual thickness gate dielectricsINTEL CORP·Filed 2019·Granted Oct 12, 2021·0 cites·20 claims
- 1545US2006240636A1Trench isolation methods of semiconductor deviceRYU HYUK-JU·Filed 2006·Application pending·0 cites
- 1644US2023305057A1Wafer level electron beam proberINTEL CORP·Filed 2022·Application pending·0 cites
- 1740US2024219460A1Enhanced electron beam (e-beam) apparatus and methodology with nano-scale e-beam probe tips for fault isolation in integrated circuits and other structuresTONG XIANGHONG·Filed 2022·Application pending·0 cites
- 1837US9312810B2Complementary Colpitts voltage controlled oscillator with low power and low phase noiseUNIV CHUNG ANG IND·Filed 2014·Granted Apr 12, 2016·0 cites·5 claims
- 1935US2004185608A1Methods of forming integrated circuit devices using buffer layers covering conductive/insulating interfacesFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →