Inventor · disambiguated record
Hyeon Joo Seul
Also filed as: SEUL HYEON JOO
5 granted patents·5 pending applications·1 citations·filing 2019–2025
66Inventor score
Top patents by PatentIndex Score
10 records- 0183US12211940B2Thin film transistor and vertical non-volatile memory device including transition metal-induced polycrystalline metal oxide channel layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jan 28, 2025·0 cites·16 claims
- 0274US10892366B2Thin film transistor and vertical non-volatile memory device including transition metal-induced polycrystalline metal oxide channel layerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 12, 2021·1 cites·18 claims
- 0374US2025151331A1Thin film transistor and vertical non-volatile memory device including transition metal-induced polycrystalline metal oxide channel layerSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0473US2025351462A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0573US2024224527A1Memory device based on igo channel layer and method of fabricating the sameUNIV HANYANG IND UNIV COOP FOUND·Filed 2024·Application pending·0 cites
- 0671US11942553B2Method for fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 26, 2024·0 cites·14 claims
- 0763US12408382B2Semiconductor memory device having a confinement layer with a two-dimensional electron gas in the confinement layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 0860US2021183886A1Memory device based on igo channel layer and method of fabricating the sameIUCF HYU·Filed 2020·Application pending·0 cites
- 0948US11588057B2Thin film transistor and vertical non-volatile memory device including metal oxide channel layer having bixbyite crystalUNIV HANYANG IND UNIV COOP FOUND·Filed 2020·Granted Feb 21, 2023·0 cites·12 claims
- 1047US2023253504A1Thin-film transistor having metal oxide semiconductor layers of heterojunction structure, display device comprising same, and manufacturing method thereforIUCF HYU·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →