Inventor · disambiguated record
Hyeonsuk Shin
Also filed as: SHIN HYEONSUK
9 granted patents·4 pending applications·2 citations·filing 2020–2024
77Inventor score
Files withSAMSUNG ELECTRONICS CO LTD13
Top patents by PatentIndex Score
13 records- 0190US12080649B2Semiconductor memory device and apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 3, 2024·1 cites·18 claims
- 0283US11624127B2Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 11, 2023·1 cites·20 claims
- 0379US12139814B2Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 0478US2025066950A1Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0572US12183679B2Interconnect structure and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·17 claims
- 0670US2025126864A1Black phosphorus-two dimensional material complex and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0768US12473662B2Nanocrystalline boron nitride film, image sensor including the same, field effect transistor including the same, and method of fabricating the nanocrystalline boron nitride filmSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·16 claims
- 0864US11424186B2Semiconductor memory device and apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·18 claims
- 0963US11462477B2Interconnect structure and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·21 claims
- 1059US12211904B2Black phosphorus-two dimensional material complex and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·11 claims
- 1158US2024242965A1Amorphous boron nitride film, semiconductor device and field effect transistor including same, and method of manufacturing boron nitride filmSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1249US2023197837A1Complex of heterogeneous two-dimensional materials and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1346US12180584B2Method of fabricating hexagonal boron nitrideSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 31, 2024·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →