Inventor · disambiguated record
Hyun-Chul Sohn
Also filed as: SOHN HYUN-CHUL
25 granted patents·7 pending applications·141 citations·filing 2003–2024
95Inventor score
Files withHYNIX SEMICONDUCTOR INC19DAEHEUNG RUBBER & TECH CO LTD2KIM SOO-HYUN2KIM HYO-SEOK1KIM IK-SOO1
Top patents by PatentIndex Score
32 records- 0190US7045846B2Memory device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted May 16, 2006·17 cites·20 claims
- 0282US7029999B2Method for fabricating transistor with polymetal gate electrodeHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 18, 2006·30 cites·17 claims
- 0380US10598245B2Dynamic damper for vehicleDAEHEUNG RUBBER & TECH CO LTD·Filed 2018·Granted Mar 24, 2020·5 cites·2 claims
- 0480US9159754B1Image sensor having anti-reflective layer and fabricating method thereofSK HYNIX INC·Filed 2014·Granted Oct 13, 2015·2 cites·15 claims
- 0579US7416936B2Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 26, 2008·5 cites·8 claims
- 0678US7655534B2Method of forming fin transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Feb 2, 2010·6 cites·14 claims
- 0777US10243000B23-dimensional non-volatile memory device and method of fabricating the sameUNIV INDUSTRY FOUNDATION UIF YONSEI UNIV·Filed 2017·Granted Mar 26, 2019·3 cites·17 claims
- 0877US8777192B2Three point supporting bush type hydromountKIM HYO-SEOK·Filed 2011·Granted Jul 15, 2014·5 cites·1 claims
- 0975US7804129B2Recessed gate electrode MOS transistor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Sep 28, 2010·4 cites·7 claims
- 1075US7217624B2Non-volatile memory device with conductive sidewall spacer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted May 15, 2007·16 cites·15 claims
- 1170US9447833B2Dynamic damperDAEHEUNG RUBBER & TECH CO LTD·Filed 2015·Granted Sep 20, 2016·2 cites·5 claims
- 1269US7601583B2Transistor structure of memory device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Oct 13, 2009·4 cites·12 claims
- 1369US6949447B2Method for fabricating isolation layer in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Sep 27, 2005·15 cites·22 claims
- 1463US7119015B2Method for forming polysilicon plug of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Oct 10, 2006·11 cites·32 claims
- 1563US2025194107A1Materials for switching elements, switching elements and methods for manufacturing switching elementsUIF UNIV INDUSTRY FOUNDATION YONSEI UNIV·Filed 2024·Application pending·0 cites
- 1661US7629221B2Method for forming capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Dec 8, 2009·2 cites·19 claims
- 1758US7229888B2Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Jun 12, 2007·5 cites·2 claims
- 1856US6979616B2Method for fabricating semiconductor device with dual gate dielectric structureHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Dec 27, 2005·5 cites·11 claims
- 1954US2009200672A1Method for manufacturing semiconductor deviceKIM SOO HYUN·Filed 2009·Application pending·0 cites
- 2050US7667253B2Non-volatile memory device with conductive sidewall spacer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Feb 23, 2010·0 cites·11 claims
- 2150US6936529B2Method for fabricating gate-electrode of semiconductor device with use of hard maskHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Aug 30, 2005·4 cites·14 claims
- 2249US2007148943A1Method for manufacturing semiconductor deviceKIM SOO HYUN·Filed 2006·Application pending·0 cites
- 2348US7338864B2Memory device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 4, 2008·0 cites·7 claims
- 2446US8058141B2Recessed gate electrode MOS transistor and method for fabricating the sameKIM JUN KI·Filed 2010·Granted Nov 15, 2011·0 cites·20 claims
- 2545US7563654B2Method of manufacturing semiconductor device for formation of pin transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jul 21, 2009·0 cites·19 claims
- 2644US7888245B2Plasma doping method and method for fabricating semiconductor device using the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Feb 15, 2011·0 cites·14 claims
- 2744US7259059B2Method for forming capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Aug 21, 2007·0 cites·10 claims
- 2842US2011284815A1Phase-change memory devices having stress relief buffersKIM IK-SOO·Filed 2011·Application pending·0 cites
- 2940US8420551B2Methods of fabricating semiconductor devices and semiconductor devices fabricated by the sameKIM MYUNG-JONG·Filed 2010·Granted Apr 16, 2013·0 cites·19 claims
- 3039US2005110069A1Hafnium oxide and aluminium oxide alloyed dielectric layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 3137US2014339490A1Resistive switching memory device having improved nonlinearity and method of fabricating the sameUNIV YONSEI IACF·Filed 2014·Application pending·0 cites
- 3233US2004127027A1Method for forming titanium silicide contact of semiconductor deviceFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →