Inventor · disambiguated record
Hyeok-Jun Son
Also filed as: SON HYEOK-JUN
11 granted patents·3 pending applications·57 citations·filing 2011–2024
89Inventor score
Top patents by PatentIndex Score
14 records- 0196US11349007B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·4 cites·18 claims
- 0295US11881519B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 23, 2024·2 cites·18 claims
- 0393US9806075B2Integrated circuit devices having a Fin-type active region and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 31, 2017·9 cites·20 claims
- 0493US9780183B2Semiconductor devices having work function metal films and tuning materialsKIM WAN-DON·Filed 2016·Granted Oct 3, 2017·12 cites·20 claims
- 0590US10312340B2Semiconductor devices having work function metal films and tuning materialsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 4, 2019·6 cites·20 claims
- 0689US8748251B2Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devicesNA HOON-JOO·Filed 2012·Granted Jun 10, 2014·10 cites·14 claims
- 0783US10593670B2Methods of manufacturing integrated circuit devices having a fin-type active regionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 17, 2020·3 cites·20 claims
- 0882US12342601B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 0982US9991357B2Semiconductor devices with gate electrodes on separate sets of high-k dielectric layersSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 5, 2018·4 cites·19 claims
- 1081US9793368B2Semiconductor devices including a rare earth element and methods of forming semiconductor devices including a rare earth elementSON HYEOK-JUN·Filed 2016·Granted Oct 17, 2017·5 cites·18 claims
- 1159US9048307B2Method of manufacturing a semiconductor device having sequentially stacked high-k dielectric layersSONG JAE-YEOL·Filed 2012·Granted Jun 2, 2015·2 cites·15 claims
- 1257US2025107136A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1350US2014246726A1Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1438US2012196433A1Method of manufacturing a semiconductor deviceHAN JEONG-HEE·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →