Inventor · disambiguated record
Hyun-Seung Song
Also filed as: SONG HYUN-SEUNG
31 granted patents·8 pending applications·105 citations·filing 2012–2025
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD36SONG HYUN-SEUNG2SEJONG INDUSTRY ACADEMIA COOPERATION FOUNDATION HONGIK UNIV1
Top patents by PatentIndex Score
39 records- 0197US11482602B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 25, 2022·6 cites·20 claims
- 0296US11929367B2Semiconductor device having gate isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
- 0396US11488953B2Semiconductor device having gate isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 1, 2022·3 cites·12 claims
- 0495US12009398B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 11, 2024·2 cites·20 claims
- 0595US9786784B1Vertical field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 10, 2017·15 cites·14 claims
- 0695US9406770B2Method of fabricating semiconductor device having a resistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 2, 2016·13 cites·19 claims
- 0791US9536835B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 3, 2017·11 cites·20 claims
- 0890US10825809B2Semiconductor device having gate isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 3, 2020·4 cites·11 claims
- 0989US9184293B2Methods of fabricating semiconductor devices having punch-through stopping regionsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·9 cites·19 claims
- 1088US9679991B2Method for manufacturing semiconductor device using gate portion as etch maskSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 13, 2017·6 cites·19 claims
- 1188US9640529B2Semiconductor device having a resistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 2, 2017·4 cites·10 claims
- 1287US2025357374A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1387US2025357369A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1487US2025098292A1Semiconductor device having gate isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1586US12238941B2Semiconductor device having gate isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Feb 25, 2025·0 cites·20 claims
- 1684US9093422B2Semiconductor device including fin component having parts with different widthsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 28, 2015·6 cites·20 claims
- 1783US12444697B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·11 claims
- 1883US9799607B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 24, 2017·4 cites·20 claims
- 1981US8835252B2Methods of fabricating semiconductor devices having increased areas of storage contactsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 16, 2014·6 cites·17 claims
- 2078US10410931B2Fabricating method of nanosheet transistor spacer including inner spacerSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 10, 2019·2 cites·17 claims
- 2178US9406663B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 2, 2016·5 cites·17 claims
- 2277US11393909B2Semiconductor devices inlcluding a fin field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 19, 2022·2 cites·18 claims
- 2377US2024297232A1Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2476US10916534B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 9, 2021·2 cites·20 claims
- 2572US11961806B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 16, 2024·0 cites·20 claims
- 2669US10438857B2Semiconductor device and method of manufacturing thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 8, 2019·1 cites·15 claims
- 2767US12249648B2Semiconductor device having spacer between contract patternsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 2867US11923298B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 2965US9548390B2Semiconductor device including field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 17, 2017·1 cites·16 claims
- 3064US9356018B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 31, 2016·1 cites·19 claims
- 3163US11978775B2Method of fabricating semiconductor devices including a fin field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 3262US12453125B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 21, 2025·0 cites·20 claims
- 3361US11355434B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 7, 2022·0 cites·19 claims
- 3453US11380791B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 5, 2022·0 cites·13 claims
- 3541US2012326267A1Composite isolation layer structures for semiconductor devices and methods of manufacturing the sameSONG HYUN-SEUNG·Filed 2012·Application pending·0 cites
- 3638US2020066856A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 3734US2016172357A1Semiconductor device and method of fabricating the sameSONG HYUN-SEUNG·Filed 2015·Application pending·0 cites
- 3834US2016005659A1Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 3932US10742772B2Method for transforming data for low volume transmission of meta model based protocol which monitors power amount data of new renewable energy, and system for transmitting data for low volume transmission of meta model based protocol which monitors power amount data of new renewable energySEJONG INDUSTRY-ACADEMIA COOPERATION FOUNDATION HONGIK UNIV·Filed 2018·Granted Aug 11, 2020·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →