Inventor · disambiguated record
I-Ming Chang
Also filed as: CHANG I-MING
35 granted patents·13 pending applications·26 citations·filing 2003–2025
95Inventor score
Top patents by PatentIndex Score
48 records- 0196US11581416B1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
- 0295US11978674B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·2 cites·18 claims
- 0393US11894461B2Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 0488US11626493B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·1 cites·20 claims
- 0588US11177259B2Multi-threshold gate structure with doped gate dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·4 cites·20 claims
- 0688US11038029B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·3 cites·20 claims
- 0787US2025366075A1Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0884US2025323056A1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0983US12369384B2Semiconductor device structure including dielectric region with plurality of different oxidation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 1083US12057495B2Semiconductor device with conformal source/drain layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·0 cites·20 claims
- 1182US12040364B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 1282US2025324728A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1381US11031291B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·2 cites·20 claims
- 1481US11018022B2Method for forming semiconductor device structure having oxide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 25, 2021·2 cites·20 claims
- 1580US12406859B2Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
- 1679US12477784B2Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 1779US11728414B2Semiconductor device including a Fin-FET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 1879US2024150192A1Gate Structures In Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1978US10978357B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·2 cites·20 claims
- 2078US2024395564A1Semiconductor device structure having gate dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2177US12402394B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 2277US2025324733A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2375US11705507B2Semiconductor device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 2473US11373910B2Semiconductor device including a Fin-FET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 2573US11251087B2Semiconductor device including a Fin-FET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 2671US11024723B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 1, 2021·0 cites·20 claims
- 2770US12266543B2Semiconductor device structure having gate dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 1, 2025·0 cites·20 claims
- 2870US2023395433A1Method for forming epitaxial source/drain features using a self-aligned mask and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2967US11842927B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 3066US11735483B2Method for forming epitaxial source/drain features using a self-aligned mask and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 3166US11710779B2Semiconductor device including interface layer and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 3265US2023386938A1High-k dielectric materials with dipole layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3363US10707333B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
- 3461US10685884B2Semiconductor device including a Fin-FET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 16, 2020·0 cites·20 claims
- 3560US10971402B2Semiconductor device including interface layer and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·0 cites·20 claims
- 3660US9054188B2Curved wafer processing on method and apparatusCHANG I-MING·Filed 2012·Granted Jun 9, 2015·1 cites·20 claims
- 3759US11908702B2Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 3856US2025113604A1Semiconductor structure with doped region and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3955US12495566B2Semiconductor device having strained channel and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 4055US2025254940A1Semiconductor structure with blocking features formed within base epitaxy layers and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4155US2024379443A1Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4254US10985265B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·0 cites·20 claims
- 4353US9978630B2Curved wafer processing method and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·0 cites·20 claims
- 4449US6958939B2Flash memory cell having multi-program channelsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Oct 25, 2005·4 cites·19 claims
- 4548US9257558B2FinFET device with gate oxide layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·0 cites·20 claims
- 4648US2024030311A1Semiconductor device including a self-aligned contact layer with enhanced etch resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4744US9362123B2Structure and method for integrated devices on different substartes with interfacial engineeringTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 7, 2016·0 cites·12 claims
- 4834US2008074922A12-transistor nonvolatile memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →