Inventor · disambiguated record
I-Hsien Tseng
Also filed as: TSENG I-HSIEN
10 granted patents·2 pending applications·18 citations·filing 2015–2024
82Inventor score
Top patents by PatentIndex Score
12 records- 0193US9691980B1Method for forming memory deviceWINBOND ELECTRONICS CORP·Filed 2016·Granted Jun 27, 2017·11 cites·10 claims
- 0275US11400673B2Articles of wear and processes for making the sameNIKE INC·Filed 2016·Granted Aug 2, 2022·2 cites·9 claims
- 0374US12115747B2Articles of wear and processes for making the sameNIKE INC·Filed 2022·Granted Oct 15, 2024·0 cites·11 claims
- 0465US10347336B1Method for obtaining optimal operating condition of resistive random access memoryWINBOND ELECTRONICS CORP·Filed 2018·Granted Jul 9, 2019·2 cites·15 claims
- 0564US9627059B2Resistive memory and data writing method for memory cell thereofWINBOND ELECTRONICS CORP·Filed 2015·Granted Apr 18, 2017·2 cites·8 claims
- 0654US9620208B2Devices and methods for programming a resistive random-access memoryWINBOND ELECTRONICS CORP·Filed 2016·Granted Apr 11, 2017·1 cites·10 claims
- 0751US12374398B2Forming operation of resistive memory deviceWINBOND ELECTRONICS CORP·Filed 2023·Granted Jul 29, 2025·0 cites·19 claims
- 0851US2025191672A1Flash memory and testing method thereofWINBOND ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0943US2019351604A1System and methods for thermoforming articlesNIKE INC·Filed 2019·Application pending·0 cites
- 1041US10643698B2Operating method of resistive memory storage apparatusWINBOND ELECTRONICS CORP·Filed 2018·Granted May 5, 2020·0 cites·10 claims
- 1136US10490275B2Resistive memory storage apparatus and writing method thereof including disturbance voltageWINBOND ELECTRONICS CORP·Filed 2018·Granted Nov 26, 2019·0 cites·18 claims
- 1232US9543010B2Resistive memory and measurement system thereofWINBOND ELECTRONICS CORP·Filed 2016·Granted Jan 10, 2017·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →