Inventor · disambiguated record
I-Cheng Tung
Also filed as: TUNG I-CHENG
16 granted patents·36 pending applications·7 citations·filing 2013–2024
86Inventor score
Top patents by PatentIndex Score
52 records- 0189US11605670B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 14, 2023·3 cites·20 claims
- 0287US11316027B2Relaxor ferroelectric capacitors and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 0385US12495559B2Capacitor with dual dielectric layersINTEL CORP·Filed 2021·Granted Dec 9, 2025·1 cites·14 claims
- 0479US2025056812A1Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0575US12160998B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 0672US2025133822A1Ribbon or wire transistor stack with selective dipole threshold voltage shifterINTEL CORP·Filed 2024·Application pending·0 cites
- 0771US2024373644A1Ferroelectric capacitors and methods of fabricationINTEL CORP·Filed 2024·Application pending·0 cites
- 0863US2025393189A1Capacitors with amorphous oxide layer for high capacitance and low leakageINTEL CORP·Filed 2024·Application pending·0 cites
- 0962US9550166B2Strontium cobaltite oxygen sponge catalyst and methods of useUT BATTELLE LLC·Filed 2013·Granted Jan 24, 2017·1 cites·18 claims
- 1061US2025385047A1Composite insulator films with low electrical leakage & high charge capacitanceINTEL CORP·Filed 2024·Application pending·0 cites
- 1159US12183739B2Ribbon or wire transistor stack with selective dipole threshold voltage shifterINTEL CORP·Filed 2020·Granted Dec 31, 2024·0 cites·21 claims
- 1259US2025212441A1Incorporation of semiconductor doping materials in metal contacts via reactive sputteringINTEL CORP·Filed 2023·Application pending·0 cites
- 1359US2025393290A1Ferroelectric field effect transistors (fefets) with relaxor ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 1459US2025309100A1Low resistivity conductor subtractively patterned interconnects using layer transfer of microstructure engineered thin filmsINTEL CORP·Filed 2024·Application pending·0 cites
- 1558US12100731B2Crystalline bottom electrode for perovskite capacitors and methods of fabricationINTEL CORP·Filed 2020·Granted Sep 24, 2024·0 cites·20 claims
- 1658US12048165B2Ferroelectric capacitors and methods of fabricationINTEL CORP·Filed 2020·Granted Jul 23, 2024·0 cites·16 claims
- 1757US2025212507A1Cmos metal contacts with dopant diffusion barriersINTEL CORP·Filed 2023·Application pending·0 cites
- 1857US2025140543A1Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon FilmsINTEL CORP·Filed 2023·Application pending·0 cites
- 1957US2025220958A1Source/drain contact trench with dielectric liner on contact metalINTEL CORP·Filed 2023·Application pending·0 cites
- 2056US12224309B2Capacitors with built-in electric fieldsINTEL CORP·Filed 2020·Granted Feb 11, 2025·0 cites·17 claims
- 2156US2025380487A1Ferroelectric field effect transistors (fefets) with improper ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 2256US2023411443A1Metal insulator metal (mim) capacitor architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 2356US2025008852A1Two-terminal ferroelectric perovskite diode memory elementINTEL CORP·Filed 2023·Application pending·0 cites
- 2455US12437929B2Capacitor with an electrically conductive layer coupled with a metal layer of the capacitorINTEL CORP·Filed 2021·Granted Oct 7, 2025·0 cites·24 claims
- 2555US12255225B2Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodesINTEL CORP·Filed 2020·Granted Mar 18, 2025·0 cites·20 claims
- 2655US2024429301A1Perovskite-based field effect transistor (fet) devices enabled by epitaxial lateral overgrowthINTEL CORP·Filed 2023·Application pending·0 cites
- 2754US12170319B2Dual contact process with stacked metal layersINTEL CORP·Filed 2020·Granted Dec 17, 2024·0 cites·20 claims
- 2854US2025006791A1Perovskite oxide field effect transistor with highly doped source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 2954US2023411278A1Metal insulator metal (mim) capacitor architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 3053US2025006840A1Negative capacitance field effect transistor (ncfet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 3153US2025006839A1P-type perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 3253US2025006841A1Technologies for barrier layers in perovskite transistorsINTEL CORP·Filed 2023·Application pending·0 cites
- 3352US12328927B2Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structuresINTEL CORP·Filed 2020·Granted Jun 10, 2025·0 cites·20 claims
- 3452US2024105508A1Integrated circuit devices with contacts using nitridized molybdenumINTEL CORP·Filed 2022·Application pending·0 cites
- 3552US2024006506A1Low-resistance and thermally stable contacts with phosphide or arsenide metal compound layersINTEL CORP·Filed 2022·Application pending·0 cites
- 3652US2024113212A1Technologies for perovskite transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 3751US11777029B2Vertical transistors for ultra-dense logic and memory applicationsINTEL CORP·Filed 2019·Granted Oct 3, 2023·0 cites·20 claims
- 3851US2024006488A1Capping source and drain regions of transistors to prevent diffusion of dopants during fabricationINTEL CORP·Filed 2022·Application pending·0 cites
- 3950US2024006494A1Source and drain refractory metal capINTEL CORP·Filed 2022·Application pending·0 cites
- 4050US2024006533A1Low-resistance and thermally stable contacts with boride, indium, or gallium metal compound layersINTEL CORP·Filed 2022·Application pending·0 cites
- 4150US2023100952A1High-k or ferroelectric gate oxide with zero-sio2 il process for transistorINTEL CORP·Filed 2021·Application pending·0 cites
- 4250US2024105810A1Vertical ferrorelectric field-effect transistor (fefet) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 4350US2023197777A1Source or drain metallization prior to contact formation in stacked transistorsINTEL CORP·Filed 2021·Application pending·0 cites
- 4450US2024097031A1Ferrorelectric field-effect transistor (fefet) devices with low operating voltage capabilitiesINTEL CORP·Filed 2022·Application pending·0 cites
- 4549US11980037B2Memory cells with ferroelectric capacitors separate from transistor gate stacksINTEL CORP·Filed 2020·Granted May 7, 2024·0 cites·20 claims
- 4648US2023102177A1Multilayer capacitor with edge insulatorINTEL CORP·Filed 2021·Application pending·0 cites
- 4748US2022199756A1Metal insulator metal (mim) capacitor or backend transistor having epitaxial oxideINTEL CORP·Filed 2020·Application pending·0 cites
- 4848US2022199519A1Metal insulator metal (mim) capacitor with perovskite dielectricINTEL CORP·Filed 2020·Application pending·0 cites
- 4948US2023197728A1Stacked transistor structures with diverse gate materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 5047US2023253444A1Capacitor devices with strontium titanate insulator layersINTEL CORP·Filed 2022·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →