Inventor · disambiguated record
Ian Cayrefourcq
Also filed as: CAYREFOURCQ IAN
18 granted patents·8 pending applications·318 citations·filing 1998–2020
94Inventor score
Top patents by PatentIndex Score
26 records- 0193US6643434B2Passive alignment using slanted wall pedestalCORNING INC·Filed 2001·Granted Nov 4, 2003·85 cites·18 claims
- 0285US7452745B2Photodetecting deviceSOITEC SILICON ON INSULATOR·Filed 2006·Granted Nov 18, 2008·8 cites·25 claims
- 0385US7387947B2Method for transferring a thin layer including a controlled disturbance of a crystalline structureSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jun 17, 2008·14 cites·20 claims
- 0484US6212319B1Electro-optical device, notably for optical distributionDASSAULT ELECTRONIQUE·Filed 1998·Granted Apr 3, 2001·83 cites·16 claims
- 0579US7695996B2Photodetecting deviceSOITEC SILICON ON INSULATOR·Filed 2008·Granted Apr 13, 2010·4 cites·20 claims
- 0675US6693926B2MEMS-based selectable laser sourceCORNING INC·Filed 2001·Granted Feb 17, 2004·19 cites·14 claims
- 0774US7799651B2Method of treating interface defects in a substrateSOITEC SILICON ON INSULATOR·Filed 2008·Granted Sep 21, 2010·4 cites·18 claims
- 0873US7772087B2Method of catastrophic transfer of a thin film after co-implantationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Aug 10, 2010·22 cites·12 claims
- 0973US7176108B2Method of detaching a thin film at moderate temperature after co-implantationSOITEC SILICON ON INSULATOR·Filed 2003·Granted Feb 13, 2007·22 cites·21 claims
- 1070US6838358B2Method of manufacturing a waferSOITEC SILICON ON INSULATOR·Filed 2003·Granted Jan 4, 2005·17 cites·24 claims
- 1169US7645486B2Method of manufacturing a silicon dioxide layerSOITEC SILICON ON INSULATOR·Filed 2007·Granted Jan 12, 2010·3 cites·20 claims
- 1269US7572714B2Film taking-off methodSOITEC SILICON ON INSULATOR·Filed 2005·Granted Aug 11, 2009·4 cites·24 claims
- 1367US7572331B2Method of manufacturing a waferSOITEC SILICON ON INSULATOR·Filed 2006·Granted Aug 11, 2009·2 cites·22 claims
- 1464US8309431B2Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantationNGUYEN NGUYET-PHUONG·Filed 2004·Granted Nov 13, 2012·16 cites·31 claims
- 1563US7078353B2Indirect bonding with disappearance of bonding layerSOITEC SILICON ON INSULATOR·Filed 2004·Granted Jul 18, 2006·8 cites·21 claims
- 1662US8241998B2Method of producing an SOI structure with an insulating layer of controlled thicknessCAYREFOURCQ IAN·Filed 2008·Granted Aug 14, 2012·4 cites·17 claims
- 1761US7601611B2Method of fabricating a semiconductor hetero-structureSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 13, 2009·1 cites·16 claims
- 1859US2023027695A1Electrochemical battery device with improved lifetime, comprising improved sealing and electrical conduction means, and manufacturing method thereofI TEN·Filed 2020·Application pending·0 cites
- 1959US2023031684A1Battery-type electrochemical device comprising improved sealing means and method for manufacturing sameI TEN·Filed 2020·Application pending·0 cites
- 2050US2023025375A1Battery having an encapsulation system that is reinforced at the contact membersI TEN·Filed 2020·Application pending·0 cites
- 2150US2023029225A1Battery, in particular a thin-film battery, having a novel encapsulation systemI TEN·Filed 2020·Application pending·0 cites
- 2249US7407548B2Method of manufacturing a waferSOITEC SILICON ON INSULATOR·Filed 2004·Granted Aug 5, 2008·2 cites·20 claims
- 2338US2021218060A1Electrolyte composition and use thereof in lithium-ion batteriesHYDRO QUEBEC·Filed 2018·Application pending·0 cites
- 2436US2002044720A1System for aligning connectors and optical devicesFiled 2001·Application pending·0 cites
- 2534US2006284252A1Process for holding strain in an island etched in a strained thin layer and structure obtained by implementation of this processBOUSSAGOL ALICE·Filed 2005·Application pending·0 cites
- 2633US2005130393A1Method for improving the quality of heterostructureFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →