Inventor · disambiguated record
Ian C. Laboriante
Also filed as: LABORIANTE IAN · LABORIANTE IAN C
13 granted patents·1 pending application·42 citations·filing 2012–2022
88Inventor score
Top patents by PatentIndex Score
14 records- 0196US9653307B1Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structuresMICRON TECHNOLOGY INC·Filed 2016·Granted May 16, 2017·23 cites·25 claims
- 0294US11289163B2Multi-decks memory device including inter-deck switchesMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 29, 2022·3 cites·15 claims
- 0389US10475515B2Multi-decks memory device including inter-deck switchesMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 12, 2019·7 cites·32 claims
- 0479US10157933B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2016·Granted Dec 18, 2018·2 cites·29 claims
- 0575US11937429B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 19, 2024·0 cites·18 claims
- 0675US10825523B2Multi-decks memory device including inter-deck switchesMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 3, 2020·2 cites·20 claims
- 0772US8633084B1Methods of forming a memory cell having programmable material that comprises a multivalent metal oxide portion and an oxygen containing dielectric portionMICRON TECHNOLOGY INC·Filed 2012·Granted Jan 21, 2014·2 cites·35 claims
- 0871US11763889B2Multi-decks memory device including inter-deck switchesMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 0971US8932933B2Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structuresLABORIANTE IAN C·Filed 2012·Granted Jan 13, 2015·3 cites·27 claims
- 1070US11239252B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 1, 2022·0 cites·6 claims
- 1160US10720446B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 21, 2020·0 cites·15 claims
- 1260US8809157B2Methods of forming a programmable region that comprises a multivalent metal oxide portion and an oxygen containing dielectric portionMICRON TECHNOLOGY INC·Filed 2013·Granted Aug 19, 2014·0 cites·31 claims
- 1354US2015084187A1Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structuresMICRON TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 1439US10580782B2Methods of forming an array of elevationally-extending strings of memory cells individually comprising a programmable charge-storage transistorMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 3, 2020·0 cites·25 claims
Join the waitlist — get patent alerts
Get an alert when Ian C. Laboriante files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →