Inventor · disambiguated record
Ibrahim Ban
Also filed as: BAN IBRAHIM · BAN IBRAHIM S
33 granted patents·10 pending applications·325 citations·filing 2002–2022
97Inventor score
Top patents by PatentIndex Score
43 records- 0197US10121792B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2017·Granted Nov 6, 2018·9 cites·1 claims
- 0297US9786667B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2017·Granted Oct 10, 2017·9 cites·20 claims
- 0397US9646970B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2016·Granted May 9, 2017·9 cites·20 claims
- 0497US9520399B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2016·Granted Dec 13, 2016·11 cites·16 claims
- 0597US9418997B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2016·Granted Aug 16, 2016·11 cites·16 claims
- 0697US9275999B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2015·Granted Mar 1, 2016·13 cites·18 claims
- 0797US8980707B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2013·Granted Mar 17, 2015·19 cites·17 claims
- 0897US8569812B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2012·Granted Oct 29, 2013·25 cites·4 claims
- 0997US8217435B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2006·Granted Jul 10, 2012·44 cites·11 claims
- 1096US7498211B2Independently controlled, double gate nanowire memory cell with self-aligned contactsINTEL CORP·Filed 2005·Granted Mar 3, 2009·50 cites·13 claims
- 1194US10381350B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2018·Granted Aug 13, 2019·4 cites·20 claims
- 1292US10916547B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2020·Granted Feb 9, 2021·2 cites·20 claims
- 1392US7560358B1Method of preparing active silicon regions for CMOS or other devicesINTEL CORP·Filed 2007·Granted Jul 14, 2009·23 cites·15 claims
- 1491US9182544B2Fabrication of planar light-wave circuits (PLCS) for optical I/OKOBRINSKY MAURO J·Filed 2011·Granted Nov 10, 2015·16 cites·20 claims
- 1589US10720434B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2019·Granted Jul 21, 2020·2 cites·20 claims
- 1688US9664858B2Optical photonic circuit couplingINTEL CORP·Filed 2012·Granted May 30, 2017·10 cites·14 claims
- 1786US7646071B2Asymmetric channel doping for improved memory operation for floating body cell (FBC) memoryINTEL CORP·Filed 2006·Granted Jan 12, 2010·15 cites·17 claims
- 1885US8731346B2Waveguide integration on laser for alignment-tolerant assemblyTSENG JIA-HUNG·Filed 2012·Granted May 20, 2014·14 cites·21 claims
- 1983US11785759B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2022·Granted Oct 10, 2023·0 cites·25 claims
- 2079US11335777B2Integrated circuit components with substrate cavitiesINTEL CORP·Filed 2017·Granted May 17, 2022·2 cites·22 claims
- 2178US7944003B2Asymmetric channel doping for improved memory operation for floating body cell (FBC) memoryINTEL CORP·Filed 2009·Granted May 17, 2011·7 cites·20 claims
- 2277US11462540B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2021·Granted Oct 4, 2022·0 cites·25 claims
- 2376US8390040B2Localized spacer for a multi-gate transistorBAN IBRAHIM·Filed 2009·Granted Mar 5, 2013·7 cites·5 claims
- 2476US7439588B2Tri-gate integration with embedded floating body memory cell using a high-K dual metal gateINTEL CORP·Filed 2005·Granted Oct 21, 2008·5 cites·8 claims
- 2575US11557667B2Group III-nitride devices with improved RF performance and their methods of fabricationINTEL CORP·Filed 2017·Granted Jan 17, 2023·2 cites·17 claims
- 2670US9618824B2Integrated Terahertz sensorINTEL CORP·Filed 2014·Granted Apr 11, 2017·4 cites·17 claims
- 2770US7859028B2Independently controlled, double gate nanowire memory cell with self-aligned contactsINTEL CORP·Filed 2009·Granted Dec 28, 2010·3 cites·6 claims
- 2857US7414290B2Double gate transistor, method of manufacturing same, and system containing sameINTEL CORP·Filed 2006·Granted Aug 19, 2008·1 cites·17 claims
- 2957US7112859B2Stepped tip junction with spacer layerINTEL CORP·Filed 2004·Granted Sep 26, 2006·7 cites·17 claims
- 3056US7666796B2Substrate patterning for multi-gate transistorsINTEL CORP·Filed 2006·Granted Feb 23, 2010·1 cites·15 claims
- 3153US7968392B2Tri-gate integration with embedded floating body memory cell using a high-K dual metal gateINTEL CORP·Filed 2008·Granted Jun 28, 2011·0 cites·10 claims
- 3251US2024222440A1Transistor with a body and back gate structure in different material layersINTEL CORP·Filed 2022·Application pending·0 cites
- 3350US7575976B2Localized spacer for a multi-gate transistorINTEL CORP·Filed 2007·Granted Aug 18, 2009·0 cites·7 claims
- 3448US2024213140A1Integrated circuit structures having backside highINTEL CORP·Filed 2022·Application pending·0 cites
- 3546US2009159936A1Device with asymmetric spacersSHAH UDAY·Filed 2007·Application pending·0 cites
- 3646US2010155880A1Back gate doping for SOI substratesINTEL CORP·Filed 2008·Application pending·0 cites
- 3746US2023054719A1Gallium nitride (gan) layer transfer and regrowth for integrated circuit technologyINTEL CORP·Filed 2021·Application pending·0 cites
- 3844US2023069054A1Gallium nitride (gan) integrated circuit technology with multi-layer epitaxy and layer transferINTEL CORP·Filed 2021·Application pending·0 cites
- 3941US2022093683A13d heterogeneous integrated crystalline piezoelectric bulk acoustic resonatorsINTEL CORP·Filed 2020·Application pending·0 cites
- 4039US2014086527A1Vertical light couplerBAN IBRAHIM·Filed 2012·Application pending·0 cites
- 4137US7138307B2Method to produce highly doped polysilicon thin filmsINTEL CORP·Filed 2004·Granted Nov 21, 2006·0 cites·32 claims
- 4235US2008029827A1Double gate transistor, method of manufacturing same, and system containing sameBAN IBRAHIM·Filed 2006·Application pending·0 cites
- 4332US2004075119A1Forming polysilicon structuresFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →