Inventor · disambiguated record
Ichiro Omura
Also filed as: OMURA ICHIRO
93 granted patents·11 pending applications·3,730 citations·filing 1990–2022
99Inventor score
Top patents by PatentIndex Score
104 records- 0198US6750508B2Power semiconductor switching element provided with buried electrodeTOSHIBA KK·Filed 2001·Granted Jun 15, 2004·190 cites·11 claims
- 0297US7304331B2Nitride semiconductor device such as transverse power FET for high frequency signal amplification or power controlTOSHIBA KK·Filed 2004·Granted Dec 4, 2007·151 cites·16 claims
- 0397US7038252B2Semiconductor device using a nitride semiconductorTOSHIBA KK·Filed 2004·Granted May 2, 2006·145 cites·10 claims
- 0497US6844592B2Semiconductor device with super junction regionTOSHIBA KK·Filed 2003·Granted Jan 18, 2005·144 cites·18 claims
- 0597US6037632ASemiconductor deviceTOSHIBA KK·Filed 1996·Granted Mar 14, 2000·293 cites·3 claims
- 0696US6693338B2Power semiconductor device having RESURF layerTOSHIBA KK·Filed 2002·Granted Feb 17, 2004·119 cites·26 claims
- 0795US5554862APower semiconductor deviceTOSHIBA KK·Filed 1994·Granted Sep 10, 1996·135 cites·7 claims
- 0895US5329142ASelf turn-off insulated-gate power semiconductor device with injection-enhanced transistor structureTOSHIBA KK·Filed 1992·Granted Jul 12, 1994·128 cites·24 claims
- 0994US7508015B2Semiconductor device using a nitride semiconductorTOSHIBA KK·Filed 2006·Granted Mar 24, 2009·29 cites·4 claims
- 1094US7319257B2Power semiconductor deviceTOSHIBA KK·Filed 2007·Granted Jan 15, 2008·22 cites·17 claims
- 1194US7271429B2Nitride semiconductor deviceTOSHIBA KK·Filed 2005·Granted Sep 18, 2007·27 cites·13 claims
- 1294US6888195B2Semiconductor device with alternating conductivity type layers having different vertical impurity concentration profilesTOSHIBA KK·Filed 2003·Granted May 3, 2005·97 cites·3 claims
- 1393US7554155B2Power semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Jun 30, 2009·26 cites·12 claims
- 1493US6933544B2Power semiconductor deviceTOSHIBA KK·Filed 2004·Granted Aug 23, 2005·72 cites·17 claims
- 1593US6919610B2Power semiconductor device having RESURF layerTOSHIBA KK·Filed 2003·Granted Jul 19, 2005·82 cites·5 claims
- 1692US7271477B2Power semiconductor device packageTOSHIBA KK·Filed 2004·Granted Sep 18, 2007·72 cites·15 claims
- 1792US6153896ASemiconductor device and control method thereofTOSHIBA KK·Filed 1998·Granted Nov 28, 2000·97 cites·7 claims
- 1892US5448083AInsulated-gate semiconductor deviceTOSHIBA KK·Filed 1994·Granted Sep 5, 1995·75 cites·36 claims
- 1991US7317225B2Power semiconductor deviceTOSHIBA KK·Filed 2006·Granted Jan 8, 2008·18 cites·11 claims
- 2091US7170106B2Power semiconductor deviceTOSHIBA KK·Filed 2005·Granted Jan 30, 2007·15 cites·10 claims
- 2191US7161209B2Power semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jan 9, 2007·56 cites·9 claims
- 2291US6940090B2Wideband gap having a low on-resistance and having a high avalanche capabilityTOSHIBA KK·Filed 2003·Granted Sep 6, 2005·43 cites·7 claims
- 2391US6809349B2Power semiconductor deviceTOSHIBA KK·Filed 2003·Granted Oct 26, 2004·43 cites·20 claims
- 2490US7723783B2Semiconductor deviceTOSHIBA KK·Filed 2006·Granted May 25, 2010·16 cites·11 claims
- 2590US7329909B2Nitride semiconductor deviceTOSHIBA KK·Filed 2005·Granted Feb 12, 2008·16 cites·20 claims
- 2690US7250641B2Nitride semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jul 31, 2007·61 cites·13 claims
- 2790US7075125B2Power semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jul 11, 2006·58 cites·19 claims
- 2890US5548150AField effect transistorTOSHIBA KK·Filed 1995·Granted Aug 20, 1996·91 cites·20 claims
- 2989US7915617B2Semiconductor deviceTOSHIBA KK·Filed 2006·Granted Mar 29, 2011·15 cites·20 claims
- 3089US7244974B2wideband gap power semiconductor device having a low on-resistance and having a high avalanche capability used for power controlTOSHIBA KK·Filed 2005·Granted Jul 17, 2007·13 cites·11 claims
- 3189US7115475B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2004·Granted Oct 3, 2006·37 cites·1 claims
- 3289US5689121AInsulated-gate semiconductor deviceTOSHIBA KK·Filed 1995·Granted Nov 18, 1997·61 cites·19 claims
- 3388US7459945B2Gate driving circuit and gate driving method of power MOSFETTOSHIBA KK·Filed 2005·Granted Dec 2, 2008·17 cites·26 claims
- 3488US6849880B1Power semiconductor deviceTOSHIBA KK·Filed 2004·Granted Feb 1, 2005·46 cites·27 claims
- 3588US5838026AInsulated-gate semiconductor deviceTOSHIBA KK·Filed 1997·Granted Nov 17, 1998·58 cites·5 claims
- 3687US5969400AHigh withstand voltage semiconductor deviceTOSHIBA KK·Filed 1996·Granted Oct 19, 1999·76 cites·5 claims
- 3787US5585651AInsulated-gate semiconductor device having high breakdown voltagesTOSHIBA KK·Filed 1995·Granted Dec 17, 1996·56 cites·30 claims
- 3886US6967374B1Power semiconductor deviceTOSHIBA KK·Filed 2004·Granted Nov 22, 2005·40 cites·20 claims
- 3986US6049109ASilicon on Insulator semiconductor device with increased withstand voltageTOSHIBA KK·Filed 1995·Granted Apr 11, 2000·64 cites·30 claims
- 4085US7772641B2Power semiconductor device with a plurality of gate electrodesTOSHIBA KK·Filed 2007·Granted Aug 10, 2010·15 cites·8 claims
- 4185US7732837B2Nitride semiconductor deviceTOSHIBA KK·Filed 2007·Granted Jun 8, 2010·10 cites·7 claims
- 4285US7531871B2Power semiconductor switching elementTOSHIBA KK·Filed 2005·Granted May 12, 2009·8 cites·8 claims
- 4385US7514783B2Semiconductor moduleTOSHIBA KK·Filed 2005·Granted Apr 7, 2009·15 cites·13 claims
- 4485US6930352B2Insulated gate semiconductor deviceTOSHIBA KK·Filed 2003·Granted Aug 16, 2005·37 cites·29 claims
- 4585US5464994AInsulated-gate thyristorTOSHIBA KK·Filed 1994·Granted Nov 7, 1995·45 cites·11 claims
- 4685US5381026AInsulated-gate thyristorTOSHIBA KK·Filed 1991·Granted Jan 10, 1995·46 cites·8 claims
- 4784US7462909B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2006·Granted Dec 9, 2008·11 cites·17 claims
- 4884US7078740B2Power semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jul 18, 2006·24 cites·13 claims
- 4983US6995426B2Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity typeTOSHIBA KK·Filed 2002·Granted Feb 7, 2006·27 cites·16 claims
- 5082US7238576B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Jul 3, 2007·30 cites·23 claims
Showing the top 50 of 104 patent records by PatentIndex Score.
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