Inventor · disambiguated record
Ignatius S. T. Tsong
Also filed as: TSONG IGNATIUS S · TSONG IGNATIUS S T
8 granted patents·2 pending applications·636 citations·filing 1999–2012
88Inventor score
Technology areasH10P
Top patents by PatentIndex Score
10 records- 0196US7589003B2GeSn alloys and ordered phases with direct tunable bandgaps grown directly on siliconUNIV ARIZONA STATE·Filed 2004·Granted Sep 15, 2009·549 cites·22 claims
- 0281US8821635B2Method for growing Si-Ge semiconductor materials and devices on substratesKOUVETAKIS JOHN·Filed 2005·Granted Sep 2, 2014·9 cites·39 claims
- 0376US6911084B2Low temperature epitaxial growth of quaternary wide bandgap semiconductorsUNIV ARIZONA·Filed 2001·Granted Jun 28, 2005·20 cites·19 claims
- 0475US7781356B2Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layerUNIV ARIZONA·Filed 2004·Granted Aug 24, 2010·17 cites·45 claims
- 0572US8216537B2Silicon-germanium hydrides and methods for making and using sameKOUVETAKIS JOHN·Filed 2006·Granted Jul 10, 2012·4 cites·58 claims
- 0666US6306675B1Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devicesUNIV ARIZONA·Filed 1999·Granted Oct 23, 2001·32 cites·12 claims
- 0755US7374738B2Superhard dielectric compounds and methods of preparationUNIV ARIZONA STATE·Filed 2002·Granted May 20, 2008·5 cites·1 claims
- 0846US8518360B2Silicon-germanium hydrides and methods for making and using sameKOUVETAKIS JOHN·Filed 2012·Granted Aug 27, 2013·0 cites·46 claims
- 0937US2004129200A1Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of SiCAINFiled 2003·Application pending·0 cites
- 1036US2004261689A1Low temperature epitaxial growth of quartenary wide bandgap semiconductorsFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →