Inventor · disambiguated record
Inchan Hwang
Also filed as: HWANG INCHAN
28 granted patents·11 pending applications·46 citations·filing 2016–2025
94Inventor score
Files withSAMSUNG ELECTRONICS CO LTD39
Top patents by PatentIndex Score
39 records- 0196US11670677B2Crossing multi-stack nanosheet structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 6, 2023·6 cites·20 claims
- 0296US11538814B2Static random access memory of 3D stacked devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 27, 2022·7 cites·20 claims
- 0396US11502167B2Semiconductor device having stepped multi-stack transistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 15, 2022·4 cites·20 claims
- 0493US10043800B2Integrated circuit device with gate line crossing fin-type active regionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 7, 2018·10 cites·20 claims
- 0592US12356665B2Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·2 cites·18 claims
- 0691US11735585B2Stacked semiconductor device having mirror-symmetric patternSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·16 claims
- 0791US11664433B2Integrated circuit devices including stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 30, 2023·2 cites·19 claims
- 0888US12040327B2Three-dimensional semiconductor device having vertical misalignmentSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 16, 2024·1 cites·20 claims
- 0988US10964791B2Semiconductor device having silicides and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 30, 2021·5 cites·20 claims
- 1086US11177362B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 16, 2021·2 cites·19 claims
- 1185US12464818B2Three-dimensional semiconductor device having vertical misalignmentSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1281US10522537B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·15 claims
- 1374US2025031360A1Selective double diffusion break structures for multi-stack semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1474US2025311304A1Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1573US10115806B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 30, 2018·2 cites·11 claims
- 1672US11437369B2Array of multi-stack nanosheet structuresSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 6, 2022·0 cites·9 claims
- 1771US12087815B2Crossing multi-stack nanosheet structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·11 claims
- 1871US12057448B2Stacked semiconductor device having mirror-symmetric patternSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 6, 2024·0 cites·4 claims
- 1969US11742345B2Method of forming an array of multi-stack nanosheet structures having a dam structure isolating multi-stack transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·11 claims
- 2068US11935922B2Semiconductor device having stepped multi-stack transistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·14 claims
- 2164US12463136B2Integrated circuit devices including backside power rail and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·16 claims
- 2264US11735640B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2361US12144163B2Selective double diffusion break structures for multi-stack semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 12, 2024·0 cites·19 claims
- 2460US11538913B2Semiconductor device having silicides and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 2558US2024357787A1Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2657US12249603B2Resistor structures of integrated circuit devices including stacked transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 2757US11968818B2SRAM memory cell for stacked transistors with different channel widthSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·20 claims
- 2856US12317582B2Integrated circuit devices including a metal resistor and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 27, 2025·0 cites·20 claims
- 2955US12200920B2Integrated circuit devices including a power distribution network and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·23 claims
- 3055US12131996B2Stacked device with backside power distribution network and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 29, 2024·0 cites·7 claims
- 3155US2024258437A1Three-dimensional stacked field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3255US2024339453A1Three-dimensional semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3355US2024258328A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3452US12364018B2Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional stacked deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·12 claims
- 3551US2024213249A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3651US2024274686A1Stacked integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3749US2024145567A1Semiconducter device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3848US2023343823A13d-stacked semiconductor device including source/drain inner spacers formed using channel isolation structure including thin silicon layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3938US2019206867A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →