Inventor · disambiguated record
In-Jun Hwang
Also filed as: HWANG IN JUN
65 granted patents·28 pending applications·391 citations·filing 1997–2025
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD58HWANG IN-JUN16IUCF HYU ERICA CAMPUS4CHOI HYUK-SOON3HONG KI-HA2
Top patents by PatentIndex Score
93 records- 0194US8569769B2E-mode high electron mobility transistors and methods of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Oct 29, 2013·21 cites·18 claims
- 0293US9117890B2High-electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 25, 2015·17 cites·17 claims
- 0392US8816396B2E-mode high electron mobility transistor and method of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Aug 26, 2014·15 cites·14 claims
- 0492US8785944B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jul 22, 2014·16 cites·38 claims
- 0591US7751223B2Magnetic memory devices using magnetic domain motionSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·12 cites·33 claims
- 0690US7936030B2Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetweenSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted May 3, 2011·9 cites·11 claims
- 0788US9443968B2High electron mobility transistors including lightly doped drain regions and methods of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Sep 13, 2016·10 cites·30 claims
- 0887US8115238B2Memory device employing magnetic domain wall movementLIM CHEE-KHENG·Filed 2007·Granted Feb 14, 2012·8 cites·15 claims
- 0987US7738278B2Magnetic memory device using magnetic domain motionSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 15, 2010·18 cites·16 claims
- 1086US9543391B2High electron mobility transistor having reduced threshold voltage variation and method of manufacturing the sameHWANG IN-JUN·Filed 2012·Granted Jan 10, 2017·6 cites·15 claims
- 1186US9231093B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 5, 2016·8 cites·26 claims
- 1286US9000485B2Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the sameLEE JEONG-YUB·Filed 2012·Granted Apr 7, 2015·9 cites·33 claims
- 1385US9245738B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 26, 2016·6 cites·16 claims
- 1482US8796737B2High electron mobility transistors and methods of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Aug 5, 2014·5 cites·25 claims
- 1582US7477539B2Magnetic device using magnetic domain dragging and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 13, 2009·14 cites·22 claims
- 1681US8514619B2Magnetic memory devices and methods of operating the sameHWANG IN-JUN·Filed 2010·Granted Aug 20, 2013·6 cites·15 claims
- 1780US7508699B2Magnetic memory device and methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 24, 2009·9 cites·15 claims
- 1879US8263449B2Method of manufacturing high electron mobility transistorHONG KI-HA·Filed 2011·Granted Sep 11, 2012·5 cites·12 claims
- 1978US9660048B2High electron mobility transistors exhibiting dual depletion and methods of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted May 23, 2017·5 cites·3 claims
- 2078US7952905B2Data storage device using magnetic domain wall movement and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 31, 2011·10 cites·23 claims
- 2178US7439770B2Magnetic tunneling junction based logic circuits and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 21, 2008·10 cites·25 claims
- 2277US9076850B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 7, 2015·4 cites·20 claims
- 2377US8878246B2High electron mobility transistors and methods of fabricating the sameHWANG IN-JUN·Filed 2011·Granted Nov 4, 2014·3 cites·8 claims
- 2477US6166781ANon-linear characteristic correction apparatus and method thereforSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Dec 26, 2000·71 cites·46 claims
- 2576US8681542B2Magnetic memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 25, 2014·4 cites·8 claims
- 2676US8218362B2Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the sameHWANG IN-JUN·Filed 2009·Granted Jul 10, 2012·4 cites·26 claims
- 2775US8339728B2Magnetic memory device using magnetic domain motionKIM KEE-WON·Filed 2007·Granted Dec 25, 2012·9 cites·18 claims
- 2874US8847692B2Oscillators and method of operating the samePI UNG-HWAN·Filed 2011·Granted Sep 30, 2014·3 cites·16 claims
- 2974US8803565B2Driving circuits, power devices and electronic devices including the sameKIM HO-JUNG·Filed 2011·Granted Aug 12, 2014·3 cites·23 claims
- 3074US8144504B2Method of operating magnetic random access memory deviceKIM KWANG-SEOK·Filed 2009·Granted Mar 27, 2012·6 cites·9 claims
- 3173US7272033B2Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·4 cites·14 claims
- 3272US9252253B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 2, 2016·2 cites·18 claims
- 3371US9356592B2Method of reducing current collapse of power deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 31, 2016·4 cites·7 claims
- 3471US9252255B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 2, 2016·2 cites·17 claims
- 3571US9245947B2High electron mobility transistors and methods of manufacturing the sameHWANG IN-JUN·Filed 2012·Granted Jan 26, 2016·2 cites·18 claims
- 3670US7732855B2Semiconductor memory device including recessed control gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 8, 2010·4 cites·20 claims
- 3768US10374082B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 6, 2019·2 cites·9 claims
- 3868US7889533B2Semiconductor device using magnetic domain wall movement and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 15, 2011·6 cites·12 claims
- 3967US2024393253A1Nanoprobe for digital surface enhanced raman scattering and digital-based diagnostic method using sameIUCF HYU ERICA CAMPUS·Filed 2024·Application pending·0 cites
- 4066US8508194B2Semiconductor deviceKIM HO-JUNG·Filed 2010·Granted Aug 13, 2013·2 cites·20 claims
- 4166US7811833B2Method of manufacturing a multi-purpose magnetic film structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 12, 2010·2 cites·20 claims
- 4265US2025271422A1Method for manufacturing multiple silver nanogap shell nanoprobe, multiple silver nanogap shell nanoprobe manufactured thereby, and method for diagnosing liquid biopsy based on sers nanoprobe using sameIUCF HYU ERICA CAMPUS·Filed 2025·Application pending·0 cites
- 4365US2025283764A1Semiconductor device and electronic system including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4464US7755930B2Semiconductor memory device and magneto-logic circuitSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 13, 2010·7 cites·17 claims
- 4564US2025301774A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4664US2025294863A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4764US2025338494A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4864US2025267929A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4963US8437160B2Multi-stack memory deviceHWANG IN-JUN·Filed 2007·Granted May 7, 2013·2 cites·41 claims
- 5063US2025254903A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 93 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →