Inventor · disambiguated record
Indira Seshadri
Also filed as: SESHADRI INDIRA · SESHADRI INDIRA P · SESHADRI INDIRA P V
30 granted patents·1 pending application·16 citations·filing 2016–2022
93Inventor score
Files withIBM31
Top patents by PatentIndex Score
31 records- 0189US10734523B2Nanosheet substrate to source/drain isolationIBM·Filed 2018·Granted Aug 4, 2020·6 cites·20 claims
- 0285US10388510B2Wet strippable OPL using reversible UV crosslinking and de-crosslinkingIBM·Filed 2018·Granted Aug 20, 2019·3 cites·18 claims
- 0384US9711507B1Separate N and P fin etching for reduced CMOS device leakageIBM·Filed 2016·Granted Jul 18, 2017·3 cites·14 claims
- 0480US10678135B2Surface treatment of titanium containing hardmasksIBM·Filed 2017·Granted Jun 9, 2020·2 cites·17 claims
- 0575US10741454B2Boundary protection for CMOS multi-threshold voltage devicesIBM·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 0670US11990342B2Metal cut patterning and etching to minimize interlayer dielectric layer lossIBM·Filed 2021·Granted May 21, 2024·0 cites·17 claims
- 0769US11646358B2Sacrificial fin for contact self-alignmentIBM·Filed 2022·Granted May 9, 2023·0 cites·20 claims
- 0868US11556057B2Surface treatment of titanium containing hardmasksIBM·Filed 2019·Granted Jan 17, 2023·0 cites·19 claims
- 0967US12426320B2Vertically stacked fin semiconductor devicesIBM·Filed 2021·Granted Sep 23, 2025·0 cites·5 claims
- 1062US11316029B2Sacrificial fin for contact self-alignmentIBM·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 1162US11121024B2Tunable hardmask for overlayer metrology contrastIBM·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 1262US10586697B2Wet strippable OPL using reversible UV crosslinking and de-crosslinkingIBM·Filed 2019·Granted Mar 10, 2020·0 cites·20 claims
- 1361US11133189B2Metal cut patterning and etching to minimize interlayer dielectric layer lossIBM·Filed 2019·Granted Sep 28, 2021·0 cites·7 claims
- 1461US10622248B2Tunable hardmask for overlayer metrology contrastIBM·Filed 2018·Granted Apr 14, 2020·0 cites·20 claims
- 1560US10622250B2Dielectric gap fill evaluation for integrated circuitsIBM·Filed 2019·Granted Apr 14, 2020·0 cites·20 claims
- 1660US10600884B2Additive core subtractive liner for metal cut etch processesIBM·Filed 2017·Granted Mar 24, 2020·0 cites·12 claims
- 1758US12362168B2Solvent annealing of an organic planarization layerIBM·Filed 2021·Granted Jul 15, 2025·0 cites·11 claims
- 1858US11226561B2Self-priming resist for generic inorganic hardmasksIBM·Filed 2018·Granted Jan 18, 2022·0 cites·19 claims
- 1958US11075266B2Vertically stacked fin semiconductor devicesIBM·Filed 2019·Granted Jul 27, 2021·0 cites·13 claims
- 2058US10734234B2Metal cut patterning and etching to minimize interlayer dielectric layer lossIBM·Filed 2017·Granted Aug 4, 2020·0 cites·8 claims
- 2157US12324236B2Bottom contact for stacked GAA FETIBM·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
- 2257US10354885B2Hard masks for block patterningIBM·Filed 2018·Granted Jul 16, 2019·0 cites·14 claims
- 2356US10312140B1Dielectric gap fill evaluation for integrated circuitsIBM·Filed 2017·Granted Jun 4, 2019·0 cites·12 claims
- 2456US10229910B2Separate N and P fin etching for reduced CMOS device leakageIBM·Filed 2017·Granted Mar 12, 2019·0 cites·20 claims
- 2555US10090164B2Hard masks for block patterningIBM·Filed 2017·Granted Oct 2, 2018·0 cites·17 claims
- 2651US10818751B2Nanosheet transistor barrier for electrically isolating the substrate from the source or drain regionsIBM·Filed 2019·Granted Oct 27, 2020·0 cites·18 claims
- 2751US10741452B2Controlling fin hardmask cut profile using a sacrificial epitaxial structureIBM·Filed 2018·Granted Aug 11, 2020·0 cites·20 claims
- 2850US10629489B2Approach to prevent collapse of high aspect ratio Fin structures for vertical transport Fin field effect transistor devicesIBM·Filed 2018·Granted Apr 21, 2020·0 cites·20 claims
- 2949US10354922B1Simplified block patterning with wet strippable hardmask for high-energy implantationIBM·Filed 2017·Granted Jul 16, 2019·0 cites·19 claims
- 3045US10665715B2Controlling gate length of vertical transistorsIBM·Filed 2018·Granted May 26, 2020·0 cites·12 claims
- 3139US2019101829A1Photoresist patterning on silicon nitrideIBM·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →