Inventor · disambiguated record
Ippei Kume
Also filed as: KUME IPPEI
31 granted patents·4 pending applications·95 citations·filing 2007–2024
95Inventor score
Top patents by PatentIndex Score
35 records- 0194US11769747B2Semiconductor device and method of manufacturing the sameKIOXIA CORP·Filed 2021·Granted Sep 26, 2023·7 cites·14 claims
- 0294US10026715B2Semiconductor device and manufacturing method thereofTOSHIBA MEMORY CORP·Filed 2016·Granted Jul 17, 2018·11 cites·15 claims
- 0389US11043419B2Semiconductor device and manufacturing method thereofTOSHIBA MEMORY CORP·Filed 2019·Granted Jun 22, 2021·6 cites·15 claims
- 0489US8648441B2Semiconductor device and method of manufacturing semiconductor deviceHIJIOKA KENICHIRO·Filed 2011·Granted Feb 11, 2014·13 cites·15 claims
- 0588US8759212B2Semiconductor device and method of manufacturing semiconductor deviceKUME IPPEI·Filed 2011·Granted Jun 24, 2014·11 cites·15 claims
- 0687US9337093B2Method of manufacturing semiconductor deviceOSHIDA DAISUKE·Filed 2011·Granted May 10, 2016·10 cites·4 claims
- 0784US8946800B2Semiconductor device with protective layer and method of manufacturing sameKUME IPPEI·Filed 2012·Granted Feb 3, 2015·8 cites·26 claims
- 0884US8390046B2Semiconductor deviceKAWAHARA JUN·Filed 2010·Granted Mar 5, 2013·8 cites·21 claims
- 0983US9196731B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Nov 24, 2015·6 cites·19 claims
- 1081US10468334B2Semiconductor device and manufacturing method thereofTOSHIBA MEMORY CORP·Filed 2017·Granted Nov 5, 2019·3 cites·16 claims
- 1175US9231105B2Semiconductor device with group-III nitride compound semiconductor layer on substrate for transistorRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 5, 2016·3 cites·9 claims
- 1273US10153227B2Method for producing semiconductor device and semiconductor deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Dec 11, 2018·2 cites·19 claims
- 1372US9589951B2High-electron-mobility transistor with protective diodeRENESAS ELECTRONICS CORP·Filed 2015·Granted Mar 7, 2017·2 cites·10 claims
- 1468US10297531B2Method for producing semiconductor device and semiconductor deviceTOSHIBA MEMORY CORP·Filed 2017·Granted May 21, 2019·1 cites·6 claims
- 1562US10204862B2Method of manufacturing semiconductor device, and semiconductor deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Feb 12, 2019·1 cites·7 claims
- 1661US8624328B2Semiconductor deviceKAWAHARA JUN·Filed 2009·Granted Jan 7, 2014·2 cites·24 claims
- 1758US12394482B2Semiconductor memory device and manufacturing method thereofKIOXIA CORP·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 1858US9373679B2Semiconductor device comprising capacitive elementRENESAS ELECTRONICS CORP·Filed 2014·Granted Jun 21, 2016·0 cites·20 claims
- 1956US10741505B2Method of manufacturing semiconductor device and semiconductor deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Aug 11, 2020·0 cites·20 claims
- 2056US8810000B2Semiconductor device comprising capacitive elementKUME IPPEI·Filed 2009·Granted Aug 19, 2014·0 cites·11 claims
- 2155US10892232B2Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Jan 12, 2021·0 cites·18 claims
- 2253US11587849B2Semiconductor device and manufacturing method thereofKIOXIA CORP·Filed 2020·Granted Feb 21, 2023·0 cites·10 claims
- 2353US10211165B2Method of manufacturing semiconductor device and semiconductor deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Feb 19, 2019·0 cites·14 claims
- 2453US2024304576A1Semiconductor deviceKIOXIA CORP·Filed 2024·Application pending·0 cites
- 2552US8803285B2Semiconductor device capable of reducing interelectrode leak current and manufacturing method thereofOHTAKE HIROTO·Filed 2007·Granted Aug 12, 2014·1 cites·15 claims
- 2649US11139208B2Semiconductor device and method of manufacturing semiconductor deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Oct 5, 2021·0 cites·15 claims
- 2748US2016079426A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 2847US10943852B2Semiconductor device and method for manufacturing the sameTOSHIBA MEMORY CORP·Filed 2019·Granted Mar 9, 2021·0 cites·7 claims
- 2945US8629529B2Semiconductor device and its manufacturing methodINOUE NAOYA·Filed 2007·Granted Jan 14, 2014·0 cites·14 claims
- 3044US10971400B2Semiconductor device, substrate for semiconductor device and method of manufacturing the semiconductor deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Apr 6, 2021·0 cites·19 claims
- 3144US10804152B2Method of manufacturing semiconductor deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Oct 13, 2020·0 cites·7 claims
- 3244US2010006976A1Semiconductor device and manufacturing method thereofKUME IPPEI·Filed 2008·Application pending·0 cites
- 3343US2016049375A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 3440US10566311B2Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Feb 18, 2020·0 cites·11 claims
- 3535US10269748B2Semiconductor device and manufacturing method of semiconductor deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Apr 23, 2019·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →