Inventor · disambiguated record
Isabelle Bertrand
Also filed as: BERTRAND ISABELLE
7 granted patents·10 pending applications·1 citations·filing 2005–2023
69Inventor score
Top patents by PatentIndex Score
17 records- 0162US10297464B2Process for the manufacture of a semiconductor element comprising a layer for trapping chargesSOITEC SILICON ON INSULATOR·Filed 2016·Granted May 21, 2019·1 cites·14 claims
- 0262US2022301847A1Support for a semiconductor structureSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 0352US12362226B2Method for forming a handling substrate for a composite structure intended for RF applications and handling substrateSOITEC SILICON ON INSULATOR·Filed 2020·Granted Jul 15, 2025·0 cites·20 claims
- 0452US11373856B2Support for a semiconductor structureSOITEC SILICON ON INSULATOR·Filed 2018·Granted Jun 28, 2022·0 cites·20 claims
- 0550US12119258B2Semiconductor structure comprising a buried porous layer for RF applicationsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Oct 15, 2024·0 cites·20 claims
- 0648US2025372371A1Process for fabricating a structure comprising a layer that acts as a barrier to diffusion of atomic speciesSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 0747US2023207382A1Method for manufacturing a semiconductor-on-insulator substrate for radiofrequency applicationsSOITEC SILICON ON INSULATOR·Filed 2021·Application pending·0 cites
- 0846US12424995B2Method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layerSOITEC SILICON ON INSULATOR·Filed 2020·Granted Sep 23, 2025·0 cites·20 claims
- 0946US2025255187A1Piezoelectric-on-insulator (poi) substrate and method for producing a piezoelectric-on-insulator (poi) substrateSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 1045US2023317496A1Carrier substrate for soi structure and associated manufacturing methodSOITEC SILICON ON INSULATOR·Filed 2021·Application pending·0 cites
- 1145US2023215760A1Method for manufacturing a semiconductor-on-insulator substrate for radiofrequency applicationsSOITEC SILICON ON INSULATOR·Filed 2021·Application pending·0 cites
- 1245US2025211199A1Piezoelectric-on-insulator (poi) substrate and method for producing a piezoelectric-on-insulator (poi) substrateSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 1343US2025191967A1Method for producing a semiconductor-on-insulator multilayer structureSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 1440US2023025429A1Method for manufacturing a semiconductor-on-insulator structure for radiofrequency applicationsSOITEC SILICON ON INSULATOR·Filed 2021·Application pending·0 cites
- 1539US10510531B2Method of fabrication of a semiconductor element comprising a highly resistive substrateSOITEC SILICON ON INSULATOR·Filed 2017·Granted Dec 17, 2019·0 cites·17 claims
- 1637US2008213981A1Method of Fabricating a Silicon-On-Insulator StructureFREESCALE SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 1735US9653536B2Method for fabricating a structureSOITEC SILICON ON INSULATOR·Filed 2013·Granted May 16, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →