Inventor · disambiguated record
Isabelle Huyet
Also filed as: HUYET ISABELLE
5 granted patents·6 pending applications·3 citations·filing 2017–2025
65Inventor score
Top patents by PatentIndex Score
11 records- 0175US11159140B2Hybrid structure for a surface acoustic wave deviceSOITEC SILICON ON INSULATOR·Filed 2017·Granted Oct 26, 2021·2 cites·10 claims
- 0271US2025343523A1Method for preparing a thin layer of ferroelectric materialSOITEC SILICON ON INSULATOR·Filed 2025·Application pending·0 cites
- 0365US11742817B2Process for transferring a thin layer to a support substrate that have different thermal expansion coefficientsSOITEC SILICON ON INSULATOR·Filed 2018·Granted Aug 29, 2023·1 cites·17 claims
- 0464US2023353115A1Process for transferring a thin layer to a support substrate that have different thermal expansion coefficientsSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 0559US2024429683A1Semiconductor structure for optoelectronic applicationsSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 0656US12445102B2Method for preparing a thin layer of ferroelectric materialSOITEC SILICON ON INSULATOR·Filed 2020·Granted Oct 14, 2025·0 cites·19 claims
- 0756US2020336127A1Hybrid structure for a surface acoustic wave deviceSOITEC SILICON ON INSULATOR·Filed 2020·Application pending·0 cites
- 0846US12424995B2Method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layerSOITEC SILICON ON INSULATOR·Filed 2020·Granted Sep 23, 2025·0 cites·20 claims
- 0946US2025194423A1Method for correcting the thickness of a piezoelectric layerSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 1046US2024120191A1Method for preparing the residue of a donor substrate, a layer of which has been removed by delaminationSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 1142US11595021B2Saw resonator comprising layers for attenuating parasitic wavesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Feb 28, 2023·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →