Inventor · disambiguated record
Isaho Kamata
Also filed as: KAMATA ISAHO
27 granted patents·11 pending applications·96 citations·filing 2003–2025
95Inventor score
Files withNUFLARE TECHNOLOGY INC8DENSO CORP7CENTRAL RES INST ELECTRIC POWER IND4KANSAI ELECTRIC POWER CO4SHOWA DENKO KK4
Top patents by PatentIndex Score
38 records- 0195US9518322B2Film formation apparatus and film formation methodNUFLARE TECHNOLOGY INC·Filed 2014·Granted Dec 13, 2016·11 cites·12 claims
- 0294US9873941B2Film-forming manufacturing apparatus and methodNUFLARE TECHNOLOGY INC·Filed 2015·Granted Jan 23, 2018·5 cites·4 claims
- 0392US12071709B2Methods for manufacturing silicon carbide single crystal ingot and silicon carbide single crystal waferDENSO CORP·Filed 2023·Granted Aug 27, 2024·2 cites·2 claims
- 0491US8716718B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2012·Granted May 6, 2014·15 cites·13 claims
- 0588US9598792B2Film-forming apparatus and film-forming methodSUZUKI KUNIHIKO·Filed 2012·Granted Mar 21, 2017·3 cites·15 claims
- 0686US8815711B2Manufacturing apparatus and method for semiconductor device and cleaning method of manufacturing apparatus for semiconductorSUZUKI KUNIHIKO·Filed 2011·Granted Aug 26, 2014·7 cites·20 claims
- 0783US7081420B2Method for preparing SiC crystal and SiC crystalCENTRAL RES INST ELECT·Filed 2003·Granted Jul 25, 2006·20 cites·28 claims
- 0880US8154026B2Silicon carbide bipolar semiconductor deviceISHII RYOSUKE·Filed 2006·Granted Apr 10, 2012·8 cites·20 claims
- 0976US10262863B2Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatusSHOWA DENKO KK·Filed 2015·Granted Apr 16, 2019·2 cites·9 claims
- 1076US2024191392A1Silicon carbide single crystal and manufacturing method of silicon carbide single crystalDENSO CORP·Filed 2024·Application pending·0 cites
- 1174US7960737B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·2 cites·1 claims
- 1273US2024110309A1Method for manufacturing silicon carbide single crystal and silicon carbide single crystal ingotCENTRAL RES INST ELECTRIC POWER IND·Filed 2023·Application pending·0 cites
- 1372US2023279580A1Silicon carbide single crystal and manufacturing method of silicon carbide single crystalDENSO CORP·Filed 2023·Application pending·0 cites
- 1469US10896831B2Film forming apparatusNUFLARE TECHNOLOGY INC·Filed 2018·Granted Jan 19, 2021·1 cites·10 claims
- 1569US9879359B2Silicon carbide semiconductor film-forming apparatus and film-forming method using the sameDENSO CORP·Filed 2014·Granted Jan 30, 2018·2 cites·14 claims
- 1669US8293623B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2008·Granted Oct 23, 2012·3 cites·14 claims
- 1768US7960257B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·1 cites·3 claims
- 1868US7960738B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·1 cites·1 claims
- 1968US2025215613A1Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingotCENTRAL RES INST ELECTRIC POWER IND·Filed 2025·Application pending·0 cites
- 2066US11846040B2Silicon carbide single crystalDENSO CORP·Filed 2020·Granted Dec 19, 2023·0 cites·12 claims
- 2166US7768017B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC CO INC·Filed 2004·Granted Aug 3, 2010·9 cites·5 claims
- 2264US12281410B2Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingotCENTRAL RES INST ELECTRIC POWER IND·Filed 2021·Granted Apr 22, 2025·0 cites·1 claims
- 2363US9570337B2Film formation apparatus and film formation methodNUFLARE TECHNOLOGY INC·Filed 2014·Granted Feb 14, 2017·1 cites·7 claims
- 2461US8367510B2Process for producing silicon carbide semiconductor deviceCENTRAL RES INST ELECT·Filed 2006·Granted Feb 5, 2013·1 cites·10 claims
- 2560US2024110308A1Silicon carbide single crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide single crystalCENTRAL RES INST ELECTRIC POWER IND·Filed 2023·Application pending·0 cites
- 2657US11906569B2Semiconductor wafer evaluation apparatus and semiconductor wafer manufacturing methodSHOWA DENKO KK·Filed 2021·Granted Feb 20, 2024·0 cites·15 claims
- 2756US8455269B2Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devicesMIYANAGI TOSHIYUKI·Filed 2006·Granted Jun 4, 2013·2 cites·10 claims
- 2855US12252808B2Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal waferDENSO CORP·Filed 2020·Granted Mar 18, 2025·0 cites·9 claims
- 2952US2015376813A1Method for producing hexagonal single crystal, method for producing hexagonal single crystal wafer, hexagonal single crystal wafer, and hexagonal single crystal elementCENTRAL RES INST ELECT·Filed 2014·Application pending·0 cites
- 3051US2013152853A1Film-forming apparatus and film-forming methodNUFLARE TECHNOLOGY INC·Filed 2012·Application pending·0 cites
- 3147US12297562B2Silicon carbide ingot including screw dislocationsMIRISE Technologies Corporation·Filed 2022·Granted May 13, 2025·0 cites·2 claims
- 3247US11107892B2SiC epitaxial wafer and method for producing sameSHOWA DENKO KK·Filed 2018·Granted Aug 31, 2021·0 cites·7 claims
- 3346US10181517B2Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic deviceDENSO CORP·Filed 2016·Granted Jan 15, 2019·0 cites·13 claims
- 3443US10584417B2Film forming apparatus, susceptor, and film forming methodNUFLARE TECHNOLOGY INC·Filed 2015·Granted Mar 10, 2020·0 cites·18 claims
- 3542US2013247816A1Film-forming apparatus for the formation of silicon carbide and film-forming method for the formation of silicon carbideNUFLARE TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 3641US2007290211A1Bipolar Semiconductor Device and Process for Producing the SameKANSAI ELECTRIC POWER CO·Filed 2005·Application pending·0 cites
- 3740US2015299898A1Susceptor processing method and susceptor processing plateNUFLARE TECHNOLOGY INC·Filed 2015·Application pending·0 cites
- 3838US2019376206A1SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAMESHOWA DENKO KK·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →