Inventor · disambiguated record
Isao Makabe
Also filed as: MAKABE ISAO
18 granted patents·14 pending applications·45 citations·filing 2007–2024
91Inventor score
Top patents by PatentIndex Score
32 records- 0185US8629479B2Semiconductor deviceNAKATA KEN·Filed 2011·Granted Jan 14, 2014·8 cites·17 claims
- 0284US8648389B2Semiconductor device with spacer layer between carrier traveling layer and carrier supplying layerMAKABE ISAO·Filed 2012·Granted Feb 11, 2014·7 cites·6 claims
- 0380US9123534B2Semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 1, 2015·4 cites·7 claims
- 0480US8247796B2Semiconductor deviceMAKABE ISAO·Filed 2010·Granted Aug 21, 2012·5 cites·9 claims
- 0579US8993416B2Method of manufacturing semiconductor deviceYUI KEIICHI·Filed 2011·Granted Mar 31, 2015·5 cites·10 claims
- 0674US8546813B2Semiconductor substrate and semiconductor deviceMAKABE ISAO·Filed 2011·Granted Oct 1, 2013·4 cites·24 claims
- 0772US8232557B2Semiconductor substrate with AlGaN formed thereon and semiconductor device using the sameMAKABE ISAO·Filed 2007·Granted Jul 31, 2012·5 cites·4 claims
- 0869US10505013B2Process of forming epitaxial substrate having N-polar gallium nitrideSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Dec 10, 2019·1 cites·16 claims
- 0969US8742426B2Semiconductor deviceNAKATA KEN·Filed 2011·Granted Jun 3, 2014·2 cites·5 claims
- 1067US10038086B2Process for forming a high electron mobility transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jul 31, 2018·1 cites·7 claims
- 1165US8754419B2Semiconductor deviceNAKATA KEN·Filed 2011·Granted Jun 17, 2014·2 cites·17 claims
- 1261US7947578B2Method for fabricating semiconductor deviceSEDI INC·Filed 2010·Granted May 24, 2011·1 cites·20 claims
- 1361US2025081504A1Semiconductor device, and production method for semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2024·Application pending·0 cites
- 1461US2024429050A1Production method for semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2024·Application pending·0 cites
- 1560US2024290825A1Semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2024·Application pending·0 cites
- 1653US11935744B2Method for manufacturing nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Mar 19, 2024·0 cites·16 claims
- 1753US2023036388A1Method of manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Application pending·0 cites
- 1852US2014346530A1Semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 1950US9355843B2Semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted May 31, 2016·0 cites·5 claims
- 2049US2018053648A1Method of manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Application pending·0 cites
- 2147US10622470B2Process of forming nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Apr 14, 2020·0 cites·9 claims
- 2246US9029873B2Semiconductor device including an aluminum nitride layer having a calculated area-averaged circularity and a method of manufacturing the deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted May 12, 2015·0 cites·18 claims
- 2345US2012315742A1Method for forming nitride semiconductor deviceYUI KEIICHI·Filed 2012·Application pending·0 cites
- 2445US2016111274A1Method for forming nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 2542US8283240B2Method for fabricating semiconductor deviceYUI KEIICHI·Filed 2011·Granted Oct 9, 2012·0 cites·6 claims
- 2639US2018158926A1Process of forming semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Application pending·0 cites
- 2737US8987015B2Method for fabricating semiconductor deviceYUI KEIICHI·Filed 2011·Granted Mar 24, 2015·0 cites·9 claims
- 2837US2012025202A1Semiconductor device and method for fabricating the sameMAKABE ISAO·Filed 2011·Application pending·0 cites
- 2935US2012025203A1Semiconductor deviceNAKATA KEN·Filed 2011·Application pending·0 cites
- 3034US2016149024A1High-electron mobility transistor and process to form the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 3132US2015279658A1Method of growing nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 3231US2015279942A1Process to produce nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →