Inventor · disambiguated record
Iwami Masayuki
Also filed as: MASAYUKI IWAMI
2 granted patents·2 pending applications·16 citations·filing 2009–2012
58Inventor score
Top patents by PatentIndex Score
4 records- 0174US8330167B2GaN-based field effect transistor and method of manufacturing the sameTAKEHIKO NOMURA·Filed 2009·Granted Dec 11, 2012·11 cites·7 claims
- 0265US8330187B2GaN-based field effect transistorTAKEHIKO NOMURA·Filed 2009·Granted Dec 11, 2012·5 cites·12 claims
- 0339US2013062616A1GaN-BASED FIELD EFFECT TRANSISTORFURUKAWA ELECTRIC CO LTD·Filed 2012·Application pending·0 cites
- 0430US2010244101A1Semiconductor device and method for manufacturing the sameFURUKAWA ELECTRIC CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →