Inventor · disambiguated record
J. Anthony Powell
Also filed as: POWELL J ANTHONY
12 granted patents·1 pending application·1,233 citations·filing 1974–2006
94Inventor score
Top patents by PatentIndex Score
13 records- 0196US5709745ACompound semi-conductors and controlled doping thereofOHIO AEROSPACE INST·Filed 1995·Granted Jan 20, 1998·552 cites·52 claims
- 0294US6488771B1Method for growing low-defect single crystal heteroepitaxial filmsNASA·Filed 2001·Granted Dec 3, 2002·60 cites·52 claims
- 0393US7449065B1Method for the growth of large low-defect single crystalsOHIO AEROSPACE INST·Filed 2006·Granted Nov 11, 2008·47 cites·46 claims
- 0490US5915194AMethod for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereonNASA·Filed 1997·Granted Jun 22, 1999·135 cites·24 claims
- 0589US6165874AMethod for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereonNASA·Filed 1998·Granted Dec 26, 2000·115 cites·17 claims
- 0688US6869480B1Method for the production of nanometer scale step height reference specimensNASA·Filed 2002·Granted Mar 22, 2005·50 cites·75 claims
- 0787US3956032AProcess for fabricating SiC semiconductor devicesNASA·Filed 1974·Granted May 11, 1976·46 cites·20 claims
- 0886US5248385AProcess for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafersNASA·Filed 1991·Granted Sep 28, 1993·106 cites·18 claims
- 0985US6461944B2Methods for growth of relatively large step-free SiC crystal surfacesNASA·Filed 2001·Granted Oct 8, 2002·38 cites·51 claims
- 1078US5463978ACompound semiconductor and controlled doping thereofOHIO AEROSPACE INST·Filed 1994·Granted Nov 7, 1995·69 cites·59 claims
- 1159US6783592B2Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocationsNASA·Filed 2002·Granted Aug 31, 2004·7 cites·72 claims
- 1250US4171522AElectronic angular position encoder apparatusREAL TIME SYSTEMS INC·Filed 1978·Granted Oct 16, 1979·8 cites·10 claims
- 1339US2004144301A1Method for growth of bulk crystals by vapor phase epitaxyFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →