Inventor · disambiguated record
J. S. Shiao
Also filed as: SHIAO J S
5 granted patents·69 citations·filing 1994–1999
80Inventor score
Top patents by PatentIndex Score
5 records- 0170US5393686AMethod of forming gate oxide by TLC gettering cleanTAIWAN SEMICONDUCTOR MFG·Filed 1994·Granted Feb 28, 1995·38 cites·4 claims
- 0250US6110812AMethod for forming polycide gatePROMOS TECHNOLOGIES INC·Filed 1999·Granted Aug 29, 2000·17 cites·4 claims
- 0335US6312983B1Etching method for reducing bit line coupling in a DRAMPROMOS TECHNOLOGIES INC·Filed 1999·Granted Nov 6, 2001·6 cites·1 claims
- 0433US6214713B1Two step cap nitride deposition for forming gate electrodesPROMOS TECHNOLOGY INC·Filed 1998·Granted Apr 10, 2001·6 cites·10 claims
- 0529US6187650B1Method for improving global planarization uniformity of a silicon nitride layer used in the formation of trenches by using a sandwich stop layerPROMOS TECH INC·Filed 1999·Granted Feb 13, 2001·2 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →