Inventor · disambiguated record
J. C. Tzeng
Also filed as: TZENG J C
3 granted patents·98 citations·filing 1976–1987
74Inventor score
Top patents by PatentIndex Score
3 records- 0177US4700454AProcess for forming MOS transistor with buried oxide regions for insulationINTEL CORP·Filed 1985·Granted Oct 20, 1987·59 cites·12 claims
- 0259US4778775ABuried interconnect for silicon on insulator structureINTEL CORP·Filed 1987·Granted Oct 18, 1988·30 cites·12 claims
- 0324US4106513ADevice and method for three point electro therapyTZENG J C·Filed 1976·Granted Aug 15, 1978·9 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →