Inventor · disambiguated record
Jan-Hendrik Alsmeier
Also filed as: ALSMEIER JAN-HENDRIK
3 granted patents·10 pending applications·0 citations·filing 2018–2024
40Inventor score
Top patents by PatentIndex Score
13 records- 0157US2025185312A1Method for producing a semiconductor component, and semiconductor componentMARTINEZ LIMIA ALBERTO·Filed 2024·Application pending·0 cites
- 0256US2025185320A1Semiconductor component and method for producing a semiconductor componentBOSCH GMBH ROBERT·Filed 2024·Application pending·0 cites
- 0355US2025169144A1Semiconductor element with optimized short-circuit capabilityBOSCH GMBH ROBERT·Filed 2024·Application pending·0 cites
- 0452US2025031409A1Semiconductor component and method for producing a semiconductor componentBOSCH GMBH ROBERT·Filed 2024·Application pending·0 cites
- 0551US12224329B2Trench transistorBOSCH GMBH ROBERT·Filed 2020·Granted Feb 11, 2025·0 cites·11 claims
- 0646US12159900B2Power transistor cell and power transistor having field shielding contacting areas connecting field shielding areas to metal areasBOSCH GMBH ROBERT·Filed 2020·Granted Dec 3, 2024·0 cites·10 claims
- 0741US12255068B2Method for forming an electrical contact and method for forming a semiconductor deviceBOSCH GMBH ROBERT·Filed 2020·Granted Mar 18, 2025·0 cites·12 claims
- 0841US2022231120A1Transistor cell including an implanted expansion regionBOSCH GMBH ROBERT·Filed 2020·Application pending·0 cites
- 0940US2022246754A1Semiconductor device and method for manufacturing a semiconductor deviceBOSCH GMBH ROBERT·Filed 2020·Application pending·0 cites
- 1038US2022231148A1Method for manufacturing a power transistor, and power transistorBOSCH GMBH ROBERT·Filed 2020·Application pending·0 cites
- 1138US2024371632A1Method for manufacturing a silicon carbide semiconductor componentBOSCH GMBH ROBERT·Filed 2022·Application pending·0 cites
- 1236US2020273986A1Vertical power transistor with high conductivity and high blocking behaviorBOSCH GMBH ROBERT·Filed 2018·Application pending·0 cites
- 1333US2023050165A1Method for producing an ohmic contact on a crystallographic c-side of a silicon carbide substrate, and ohmic contactBOSCH GMBH ROBERT·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →