Inventor · disambiguated record
Jaejik Baek
Also filed as: BAEK JAEJIK
2 granted patents·13 pending applications·0 citations·filing 2022–2025
25Inventor score
Files withSAMSUNG ELECTRONICS CO LTD15
Top patents by PatentIndex Score
15 records- 0176US2025359308A1Integrated circuit devices including stacked field effect transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0267US12396253B2Integrated circuit devices including stacked field effect transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·19 claims
- 0353US2024079329A1Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0452US12364018B2Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional stacked deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·12 claims
- 0552US2025031444A13d-stacked semiconductor device manufactured using channel spacerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0652US2024282670A1Semiconductor device including self-aligned backside contact structure formed based on contact isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0752US2024371880A1Integrated circuit devices including intergate spacer and methods of fabrication the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0852US2024282855A1Semiconductor device including 3d-stacked field-effect transistors having isolation structure between contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0950US2023343824A13d-stacked semiconductor device including gate structure formed of polycrystalline silicon or polycrystalline silicon including dopantsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1050US2024079330A1Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1149US2023343839A1Via structure connecting front side structure of semiconductor device to bspdn, and method of manufacturing the same using sacrificial via structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1248US2023352529A13d-stacked semiconductor device having different channel layer intervals at lower nanosheet transistor and upper nanosheet transistorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1348US2023343823A13d-stacked semiconductor device including source/drain inner spacers formed using channel isolation structure including thin silicon layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1447US2023361032A1Wet recess for ru subtractive processSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1547US2023395659A1Transistor stacks having spacers, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →