Inventor · disambiguated record
Jangseok Choi
Also filed as: CHOI JANGSEOK
26 granted patents·5 pending applications·72 citations·filing 2010–2025
95Inventor score
Top patents by PatentIndex Score
31 records- 0197US10268541B2DRAM assist error correction mechanism for DDR SDRAM interfaceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 23, 2019·18 cites·11 claims
- 0293US11625296B2DRAM assist error correction mechanism for DDR SDRAM interfaceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 11, 2023·2 cites·11 claims
- 0392US11756646B2Memory module with reduced ECC overhead and memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 12, 2023·4 cites·7 claims
- 0492US10977118B2DRAM assist error correction mechanism for DDR SDRAM interfaceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 13, 2021·5 cites·6 claims
- 0588US10394648B2Method to deliver in-DRAM ECC information through DDR busSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 27, 2019·4 cites·10 claims
- 0687US11068347B2Memory controllers, memory systems including the same and memory modulesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 20, 2021·4 cites·20 claims
- 0786US8270226B2Memory module having a plurality of phase change memories, buffer RAM and NAND flash memoryCHOI JANGSEOK·Filed 2010·Granted Sep 18, 2012·16 cites·13 claims
- 0883US11222709B2Memory module with reduced ECC overhead and memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 11, 2022·2 cites·9 claims
- 0982US11157358B2Memory module, error correction method of memory controller controlling the same, and computing system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 26, 2021·2 cites·19 claims
- 1082US10347306B2Self-optimized power management for DDR-compatible memory systemsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 9, 2019·6 cites·20 claims
- 1182US2025036584A1Asynchronous communication protocol compatible with synchronous ddr protocolSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1280US12468445B2Coordinated in-module RAS features for synchronous DDR compatible memorySAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 1380US11507456B2Memory module, error correction method of memory controller controlling the same, and computing system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 22, 2022·1 cites·8 claims
- 1478US12242344B2DRAM assist error correction mechanism for DDR SDRAM interfaceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·11 claims
- 1577US11010242B2DRAM assist error correction mechanism for DDR SDRAM interfaceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 18, 2021·2 cites·3 claims
- 1677US10795764B2Method to deliver in-DRAM ECC information through DDR busSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 6, 2020·1 cites·12 claims
- 1776US12189546B2Asynchronous communication protocol compatible with synchronous DDR protocolSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 1876US10908993B2Method to deliver in-DRAM ECC information through DDR busSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·1 cites·21 claims
- 1973US12032828B2Coordinated in-module RAS features for synchronous DDR compatible memorySAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 9, 2024·0 cites·20 claims
- 2072US10592114B2Coordinated in-module RAS features for synchronous DDR compatible memorySAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 17, 2020·2 cites·18 claims
- 2172US2025342872A1Semiconductor memory device and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2268US11397698B2Asynchronous communication protocol compatible with synchronous DDR protocolSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 2368US11294571B2Coordinated in-module RAS features for synchronous DDR compatible memorySAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 5, 2022·0 cites·18 claims
- 2468US9837135B2Methods for addressing high capacity SDRAM-like memory without increasing pin costSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 5, 2017·2 cites·30 claims
- 2558US10621119B2Asynchronous communication protocol compatible with synchronous DDR protocolSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 14, 2020·0 cites·23 claims
- 2657US12380935B2Semiconductor memory device and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·18 claims
- 2756US12265488B2Apparatus and method for die-to-die (D2D) interconnectsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 2854US2024347524A1Semiconductor packageSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2946US10504572B2Methods for addressing high capacity SDRAM-like memory without increasing pin costSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 10, 2019·0 cites·20 claims
- 3039US2013259489A1Memory expanding device, portable mobile device and portable mobile system using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3135US2012269489A1Dram package, dram module including dram package, graphic module including dram package and multimedia device including dram packagePARK SUNGJOO·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →