Inventor · disambiguated record
James David Clarkson
Also filed as: CLARKSON JAMES · CLARKSON JAMES DAVID
14 granted patents·3 pending applications·33 citations·filing 2021–2024
87Inventor score
Files withKEPLER COMPUTING INC17
Top patents by PatentIndex Score
17 records- 0197US11765908B1Memory device fabrication through wafer bondingKEPLER COMPUTING INC·Filed 2023·Granted Sep 19, 2023·4 cites·19 claims
- 0297US11659714B1Ferroelectric device film stacks with texturing layer, and method of forming suchKEPLER COMPUTING INC·Filed 2021·Granted May 23, 2023·27 cites·19 claims
- 0395US11741428B1Iterative monetization of process development of non-linear polar material and devicesKEPLER COMPUTING INC·Filed 2022·Granted Aug 29, 2023·2 cites·19 claims
- 0482US12274071B1Capacitor integrated with a transistor for logic and memory applicationsKEPLER COMPUTING INC·Filed 2023·Granted Apr 8, 2025·0 cites·22 claims
- 0581US12446231B1Method of integrating a capacitor including a non-linear polar material with a transistor through wafer bondingKEPLER COMPUTING INC·Filed 2023·Granted Oct 14, 2025·0 cites·22 claims
- 0676US12464730B2Method of forming capacitors through wafer bondingKEPLER COMPUTING INC·Filed 2023·Granted Nov 4, 2025·0 cites·21 claims
- 0776US12147941B2Iterative monetization of precursor in process development of non-linear polar material and devicesKEPLER COMPUTING INC·Filed 2023·Granted Nov 19, 2024·0 cites·17 claims
- 0875US2024347397A1Method of memory device fabrication through iterative multilayer stack developmentKEPLER COMPUTING INC·Filed 2024·Application pending·0 cites
- 0970US12094511B1Write disturb mitigation for column multiplexed non-linear polar material based multi-capacitor bit-cellKEPLER COMPUTING INC·Filed 2022·Granted Sep 17, 2024·0 cites·20 claims
- 1070US11744081B1Ferroelectric device film stacks with texturing layer which is part of a bottom electrode, and method of forming suchKEPLER COMPUTING INC·Filed 2021·Granted Aug 29, 2023·0 cites·19 claims
- 1170US11716858B1Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming suchKEPLER COMPUTING INC·Filed 2021·Granted Aug 1, 2023·0 cites·19 claims
- 1270US2024274651A1Method of forming stacked capacitors through wafer bondingKEPLER COMPUTING INC·Filed 2023·Application pending·0 cites
- 1369US12190946B1Read disturb mitigation for non-linear polar material based multi-capacitor bit-cellKEPLER COMPUTING INC·Filed 2022·Granted Jan 7, 2025·0 cites·18 claims
- 1469US12062584B1Iterative method of multilayer stack development for device applicationsKEPLER COMPUTING INC·Filed 2022·Granted Aug 13, 2024·0 cites·12 claims
- 1568US12262543B1High density ferroelectric random access memory (FeRAM) devices and methods of fabricationKEPLER COMPUTING INC·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 1663US2023395134A1Write disturb mitigation for non-linear polar material based multi-capacitor bit-cellKEPLER COMPUTING INC·Filed 2022·Application pending·0 cites
- 1762US11832451B1High density ferroelectric random access memory (FeRAM) devices and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Nov 28, 2023·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →