Inventor · disambiguated record
James R. Cricchi
Also filed as: CRICCHI JAMES R · OEHLER HARRY G
16 granted patents·756 citations·filing 1970–1995
95Inventor score
Top patents by PatentIndex Score
16 records- 0196US4527257ACommon memory gate non-volatile transistor memoryWESTINGHOUSE ELECTRIC CORP·Filed 1982·Granted Jul 2, 1985·141 cites·22 claims
- 0296US4090258AMNOS non-volatile memory with write cycle suppressionWESTINGHOUSE ELECTRIC CORP·Filed 1976·Granted May 16, 1978·81 cites·9 claims
- 0396US4053916ASilicon on sapphire MOS transistorWESTINGHOUSE ELECTRIC CORP·Filed 1975·Granted Oct 11, 1977·122 cites·10 claims
- 0493US4513309APrevention of latch-up in CMOS integrated circuits using Schottky diodesWESTINGHOUSE ELECTRIC CORP·Filed 1982·Granted Apr 23, 1985·78 cites·18 claims
- 0593US4099069ACircuit producing a common clear signal for erasing selected arrays in a mnos memory systemWESTINGHOUSE ELECTRIC CORP·Filed 1976·Granted Jul 4, 1978·73 cites·15 claims
- 0692US4064405AComplementary MOS logic circuitWESTINGHOUSE ELECTRIC CORP·Filed 1976·Granted Dec 20, 1977·40 cites·4 claims
- 0788US4149270AVariable threshold device memory circuit having automatic refresh featureWESTINGHOUSE ELECTRIC CORP·Filed 1977·Granted Apr 10, 1979·53 cites·5 claims
- 0885US4109163AHigh speed, radiation hard complementary mos capacitive voltage level shift circuitWESTINGHOUSE ELECTRIC CORP·Filed 1977·Granted Aug 22, 1978·23 cites·15 claims
- 0979US4183134AHigh yield processing for silicon-on-sapphire CMOS integrated circuitsWESTINGHOUSE ELECTRIC CORP·Filed 1978·Granted Jan 15, 1980·37 cites·11 claims
- 1076US5559349ASilicon integrated circuit with passive devices over high resistivity silicon substrate portion, and active devices formed in lower resistivity silicon layer over the substrateNORTHROP GRUMMAN CORP·Filed 1995·Granted Sep 24, 1996·47 cites·5 claims
- 1163US4455742AMethod of making self-aligned memory MNOS-transistorWESTINGHOUSE ELECTRIC CORP·Filed 1982·Granted Jun 26, 1984·16 cites·21 claims
- 1258US4096509AMNOS memory transistor having a redeposited silicon nitride gate dielectricUS AIR FORCE·Filed 1976·Granted Jun 20, 1978·16 cites·3 claims
- 1347US4148049ARadiation hardened drain-source protected mnos transistorWESTINGHOUSE ELECTRIC CORP·Filed 1977·Granted Apr 3, 1979·7 cites·5 claims
- 1445US4233673AElectrically resettable non-volatile memory for a fuse systemWESTINGHOUSE ELECTRIC CORP·Filed 1970·Granted Nov 11, 1980·11 cites·10 claims
- 1537US4053917ADrain source protected MNOS transistor and method of manufactureUS AIR FORCE·Filed 1976·Granted Oct 11, 1977·7 cites·1 claims
- 1624US4685194ADirect moat self-aligned field oxide techniqueUS AIR FORCE·Filed 1985·Granted Aug 11, 1987·4 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →