Inventor · disambiguated record
Jae-Jong Han
Also filed as: HAN JAE-JONG
22 granted patents·6 pending applications·142 citations·filing 1996–2020
94Inventor score
Top patents by PatentIndex Score
28 records- 0188US11069820B2FinFET devices having active patterns and gate spacers on field insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 20, 2021·2 cites·18 claims
- 0288US9390977B2Method for manufacturing a fin=shaped field effect transistor capable of reducing a threshold voltage variationSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 12, 2016·5 cites·20 claims
- 0386US7273822B2Methods and apparatus for forming thin films for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 25, 2007·9 cites·27 claims
- 0484US7803679B2Method of forming a vertical diode and method of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 28, 2010·8 cites·6 claims
- 0581US6730570B2Method for forming a self-aligned contact of a semiconductor device and method for manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 4, 2004·33 cites·34 claims
- 0680US8241979B2Method of forming a vertical diode and method of manufacturing a semiconductor device using the samePARK SANG-JIN·Filed 2010·Granted Aug 14, 2012·4 cites·7 claims
- 0776US6828254B2Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 7, 2004·14 cites·7 claims
- 0866US8497545B2Method of forming nonvolatile memory device having floating gate and related deviceJEE JUNG-GEUN·Filed 2011·Granted Jul 30, 2013·2 cites·12 claims
- 0965US7091074B2Method of forming a gate oxide layer in a semiconductor device and method of forming a gate electrode having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 15, 2006·9 cites·21 claims
- 1062US7888204B2Method of forming nonvolatile memory device having floating gate and related deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 15, 2011·2 cites·16 claims
- 1162US6815370B2Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 9, 2004·4 cites·11 claims
- 1261US8987694B2Semiconductor devices having a vertical diode and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Mar 24, 2015·1 cites·20 claims
- 1357US6723662B2Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with reduced chlorideSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 20, 2004·5 cites·29 claims
- 1456US6794263B1Method of manufacturing a semiconductor device including alignment markSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 21, 2004·8 cites·6 claims
- 1554US10658249B2Methods for fabricating finFET devices having gate spacers on field insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 19, 2020·0 cites·16 claims
- 1652US2008029031A1Methods and apparatus for forming thin films for semiconductor devicesYEO JAE-HYUN·Filed 2007·Application pending·0 cites
- 1750US7118975B2Method for manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 10, 2006·4 cites·16 claims
- 1848US5821157AArgon amorphizing polysilicon layer fabricationSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 13, 1998·13 cites·11 claims
- 1947US6225199B1Semiconductor device having triple-wellSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted May 1, 2001·17 cites·3 claims
- 2046US2008286957A1Method forming epitaxial silicon structureSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2145US9859376B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 2, 2018·0 cites·18 claims
- 2245US6881637B2Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 19, 2005·2 cites·19 claims
- 2343US2008014753A1Method of Manufacturing a Semiconductor Device Using a Radical Oxidation ProcessJANG WON-JUN·Filed 2007·Application pending·0 cites
- 2439US2008305572A1Method of fabricating image device having capacitor and image device fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2539US2005022741A1Chemical vapor deposition apparatus and method of forming thin layer using sameFiled 2004·Application pending·0 cites
- 2637US9202844B2Semiconductor devices having blocking layers and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 1, 2015·0 cites·6 claims
- 2737US7763550B2Method of forming a layer on a waferSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 27, 2010·0 cites·19 claims
- 2833US2016086943A1Semiconductor device and method for manufacturing semiconductor deviceLEE SUN YOUNG·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →