Inventor · disambiguated record
Jang-Eun Heo
Also filed as: HEO JANG-EUN
8 granted patents·6 pending applications·56 citations·filing 2005–2010
85Inventor score
Top patents by PatentIndex Score
14 records- 0188US7803657B2Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 28, 2010·13 cites·16 claims
- 0288US7666789B2Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 23, 2010·14 cites·20 claims
- 0385US7982318B2Device including contact structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 19, 2011·14 cites·20 claims
- 0478US7465604B2Methods of fabricating alignment key structures in semiconductor devices including protected electrode structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 16, 2008·7 cites·10 claims
- 0576US8148710B2Phase-change memory device using a variable resistance structureCHOI SUK-HUN·Filed 2010·Granted Apr 3, 2012·3 cites·11 claims
- 0676US7585683B2Methods of fabricating ferroelectric devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·5 cites·23 claims
- 0747US2009061538A1Methods of forming ferroelectric capacitors and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 0846US7811834B2Methods of forming a ferroelectric layer and methods of manufacturing a ferroelectric capacitor including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 12, 2010·0 cites·5 claims
- 0945US2008048226A1Direct cell via structures for ferroelectric random access memory devices and methods of fabricating such structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1041US2009302302A1Metal oxide resistive memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1141US2009045453A1Nonvolatile memory devices including gate conductive layers having perovskite structure and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1239US7583095B2High-density probe arraySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 1, 2009·0 cites·16 claims
- 1338US2007212797A1Method of forming a ferroelectric deviceCHOI SUK-HUN·Filed 2007·Application pending·0 cites
- 1438US2006263289A1Metal oxide resistive memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →