Inventor · disambiguated record
Jaroslav Hynecek
Also filed as: HYNECEK JAROSLAV
159 granted patents·8 pending applications·3,279 citations·filing 1975–2021
99Inventor score
Files withTEXAS INSTRUMENTS INC71HYNECEK JAROSLAV35SEMICONDUCTOR COMPONENTS IND LLC26INTELLECTUAL VENTURES II LLC8ISETEX INC7
Top patents by PatentIndex Score
167 records- 0199US8120069B2Stratified photodiode for high resolution CMOS image sensor implemented with STI technologyHYNECEK JAROSLAV·Filed 2009·Granted Feb 21, 2012·118 cites·20 claims
- 0298US8723284B1Back side illuminated CMOS image sensor with global shutter storage gates stacked on top of pinned photodiodesHYNECEK JAROSLAV·Filed 2011·Granted May 13, 2014·52 cites·20 claims
- 0398US8575531B2Image sensor array for back side illumination with global shutter using a junction gate photodiodeHYNECEK JAROSLAV·Filed 2011·Granted Nov 5, 2013·55 cites·20 claims
- 0498US8471315B1CMOS image sensor having global shutter pixels built using a buried channel transfer gate with a surface channel dark current drainHYNECEK JAROSLAV·Filed 2011·Granted Jun 25, 2013·34 cites·20 claims
- 0597US10312275B2Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilitiesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Jun 4, 2019·31 cites·20 claims
- 0697US7875948B2Backside illuminated image sensorHYNECEK JAROSLAV·Filed 2008·Granted Jan 25, 2011·74 cites·31 claims
- 0797US4229752AVirtual phase charge transfer deviceTEXAS INSTRUMENTS INC·Filed 1978·Granted Oct 21, 1980·86 cites·5 claims
- 0896US9456159B1Pixels with an active reset circuit in CMOS image sensorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Sep 27, 2016·18 cites·20 claims
- 0996US8946845B1Stacked pixels for high resolution CMOS image sensors with BCMD charge detectorsHYNECEK JAROSLAV·Filed 2011·Granted Feb 3, 2015·20 cites·7 claims
- 1096US8928792B1CMOS image sensor with global shutter, rolling shutter, and a variable conversion gain, having pixels employing several BCMD transistors coupled to a single photodiode and dual gate BCMD transistors for charge storage and sensingHYNECEK JAROSLAV·Filed 2011·Granted Jan 6, 2015·25 cites·9 claims
- 1196US8471310B2Image sensor pixels with back-gate-modulated vertical transistorHYNECEK JAROSLAV·Filed 2011·Granted Jun 25, 2013·27 cites·21 claims
- 1296US8258560B1Image sensors with stacked photo-diodesHYNECEK JAROSLAV·Filed 2011·Granted Sep 4, 2012·16 cites·11 claims
- 1395US9888197B1Methods and apparatus for a CMOS image sensor with an in-pixel amplifierSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Feb 6, 2018·12 cites·20 claims
- 1495US8686479B2Stacked pixel for high resolution CMOS image sensorHYNECEK JAROSLAV·Filed 2010·Granted Apr 1, 2014·11 cites·12 claims
- 1595US4819070AImage sensor arrayTEXAS INSTRUMENTS INC·Filed 1987·Granted Apr 4, 1989·125 cites·20 claims
- 1694US8618459B2Image sensor array for the back side illumination with junction gate photodiode pixelsHYNECEK JAROSLAV·Filed 2011·Granted Dec 31, 2013·11 cites·20 claims
- 1794US7737475B2Stacked pixel for high resolution CMOS image sensorHYNECEK JAROSLAV·Filed 2006·Granted Jun 15, 2010·18 cites·24 claims
- 1894US4309624AFloating gate amplifier method of operation for noise minimization in charge coupled devicesTEXAS INSTRUMENTS INC·Filed 1979·Granted Jan 5, 1982·55 cites·3 claims
- 1993US9706142B2High dynamic range and global shutter image sensor pixels having charge overflow signal detecting structuresSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Jul 11, 2017·8 cites·18 claims
- 2093US8274587B2Image sensor pixels with vertical charge transferHYNECEK JAROSLAV·Filed 2010·Granted Sep 25, 2012·15 cites·13 claims
- 2193US8217437B2Image sensor with compact pixel layoutHYNECEK JAROSLAV·Filed 2011·Granted Jul 10, 2012·7 cites·23 claims
- 2293US8044446B2Image sensor with compact pixel layoutINTELLECTUAL VENTURES II LLC·Filed 2010·Granted Oct 25, 2011·8 cites·28 claims
- 2393US6278142B1Semiconductor image intensifierISETEX INC·Filed 2000·Granted Aug 21, 2001·83 cites·34 claims
- 2493US5337340ACharge multiplying detector (CMD) suitable for small pixel CCD image sensorsTEXAS INSTRUMENTS INC·Filed 1993·Granted Aug 9, 1994·127 cites·27 claims
- 2592US9654713B2Image sensors, methods, and pixels with tri-level biased transfer gatesKRYMSKI ALEXANDER·Filed 2015·Granted May 16, 2017·8 cites·18 claims
- 2692US8420438B2Backside illuminated image sensorHYNECEK JAROSLAV·Filed 2010·Granted Apr 16, 2013·12 cites·20 claims
- 2792US7079178B2High dynamic range active pixel CMOS image sensor and data processing system incorporating adaptive pixel resetHYNECEK JAROSLAV·Filed 2002·Granted Jul 18, 2006·50 cites·11 claims
- 2891US4023562AMiniature pressure transducer for medical use and assembly methodUNIV CASE WESTERN RESERVE·Filed 1975·Granted May 17, 1977·271 cites·10 claims
- 2990US9159753B2Image sensor pixels with self-aligned lateral anti-blooming structuresSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Oct 13, 2015·6 cites·20 claims
- 3089US8937272B2Vertical JFET source follower for small pixel CMOS image sensorsHYNECEK JAROSLAV·Filed 2012·Granted Jan 20, 2015·5 cites·13 claims
- 3188US4901129ABulk charge modulated transistor threshold image sensor elements and method of makingTEXAS INSTRUMENTS INC·Filed 1989·Granted Feb 13, 1990·63 cites·14 claims
- 3287US10957724B2Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilitiesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Mar 23, 2021·3 cites·5 claims
- 3387US8242546B2Small pixel for image sensors with JFET and vertically integrated reset diodeHYNECEK JAROSLAV·Filed 2008·Granted Aug 14, 2012·8 cites·9 claims
- 3487US7075575B2Gated vertical punch through device used as a high performance charge detection amplifierISETEX INC·Filed 2001·Granted Jul 11, 2006·39 cites·11 claims
- 3586US9936150B2Image sensors with a rolling shutter scanning mode and high dynamic rangeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Apr 3, 2018·4 cites·20 claims
- 3686US9602750B2Image sensor pixels having built-in variable gain feedback amplifier circuitrySEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Mar 21, 2017·6 cites·17 claims
- 3786US9479717B2Image sensor array with external charge detection circuitrySEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Oct 25, 2016·6 cites·20 claims
- 3886US7633134B2Stratified photodiode for high resolution CMOS image sensor implemented with STI technologyHYNECEK JAROSLAV·Filed 2006·Granted Dec 15, 2009·6 cites·9 claims
- 3985US8710420B2Image sensor pixels with junction gate photodiodesHYNECEK JAROSLAV·Filed 2012·Granted Apr 29, 2014·3 cites·19 claims
- 4085US8247853B2Stratified photodiode for high resolution CMOS image sensor implemented with STI technologyHYNECEK JAROSLAV·Filed 2009·Granted Aug 21, 2012·5 cites·23 claims
- 4185US8159011B2Complementary metal oxide semiconductor (CMOS) image sensor with extended pixel dynamic range incorporating transfer gate with potential wellHYNECEK JAROSLAV·Filed 2007·Granted Apr 17, 2012·7 cites·16 claims
- 4285US4708766AHydrogen iodide etch of tin oxideTEXAS INSTRUMENTS INC·Filed 1986·Granted Nov 24, 1987·65 cites·26 claims
- 4384US9905608B1EMCCD image sensor with stable charge multiplication gainSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Feb 27, 2018·4 cites·13 claims
- 4484US8497546B2Back-side-illuminated image sensors with bulk-charge-modulated image sensor pixelsHYNECEK JAROSLAV·Filed 2011·Granted Jul 30, 2013·3 cites·22 claims
- 4584US7139023B2High dynamic range charge readout systemTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 21, 2006·25 cites·7 claims
- 4684US5286990ATop buss virtual phase frame interline transfer CCD image sensorTEXAS INSTRUMENTS INC·Filed 1992·Granted Feb 15, 1994·55 cites·15 claims
- 4784US5182623ACharge coupled device/charge super sweep image system and method for makingTEXAS INSTRUMENTS INC·Filed 1991·Granted Jan 26, 1993·50 cites·23 claims
- 4884US4814648ALow 1/f noise amplifier for CCD imagersTEXAS INSTRUMENTS INC·Filed 1987·Granted Mar 21, 1989·43 cites·14 claims
- 4983US10070079B2High dynamic range global shutter image sensors having high shutter efficiencySEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Sep 4, 2018·4 cites·20 claims
- 5083US9502457B2Global shutter image sensor pixels having centralized charge storage regionsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Nov 22, 2016·2 cites·20 claims
Showing the top 50 of 167 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →