Inventor · disambiguated record
Jae-Woong Hyun
Also filed as: HYUN JAE-WOONG
31 granted patents·8 pending applications·429 citations·filing 2005–2013
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD35HYUN JAE-WOONG1KONG JUN JIN1PARK JU-HEE1SAMSUNG ELECRONICS CO LTD1
Top patents by PatentIndex Score
39 records- 0199US7622761B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 24, 2009·247 cites·13 claims
- 0295US7352037B2Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 1, 2008·32 cites·21 claims
- 0393US7514325B2Fin-FET having GAA structure and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 7, 2009·23 cites·16 claims
- 0485US7639524B2Multi-bit nonvolatile memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 29, 2009·12 cites·32 claims
- 0583US7911842B2Memory cell programming method and semiconductor device for simultaneously programming a plurality of memory block groupsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 22, 2011·10 cites·21 claims
- 0683US7436704B2Non-volatile memory devices and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·14 cites·26 claims
- 0782US7679960B2Non-volatile memory device and method of operating the sameSAMSUNG ELECRONICS CO LTD·Filed 2007·Granted Mar 16, 2010·10 cites·22 claims
- 0880US8020081B2Multi-level cell memory devices using trellis coded modulation and methods of storing data in and reading data from the memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 13, 2011·12 cites·21 claims
- 0978US7829932B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 9, 2010·8 cites·6 claims
- 1072US8499215B2Multi-level cell memory devices and methods of storing data in and reading data from the memory devicesKONG JUN JIN·Filed 2007·Granted Jul 30, 2013·7 cites·11 claims
- 1171US7977707B2Capacitorless DRAM having a hole reserving unitSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 12, 2011·3 cites·22 claims
- 1271US7839694B2Nonvolatile memory devices and data reading methodsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 23, 2010·7 cites·21 claims
- 1371US7729175B2Method of writing/reading data into/from memory cell and page buffer using different codes for writing and reading operationsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 1, 2010·7 cites·19 claims
- 1471US7675779B2Non-volatile memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 9, 2010·7 cites·31 claims
- 1570US7947590B2Method of manufacturing a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 24, 2011·3 cites·11 claims
- 1669US7349262B2Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·7 cites·11 claims
- 1763US8004906B2Nonvolatile memory device and method of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 23, 2011·2 cites·23 claims
- 1863US7551491B2Unit cell of a non-volatile memory device, a non-volatile memory device and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 23, 2009·5 cites·22 claims
- 1960US7649784B2Memory cell programming methods capable of reducing coupling effectsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 19, 2010·4 cites·20 claims
- 2057US7636251B2Methods of operating a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 22, 2009·4 cites·18 claims
- 2154US7978584B2Pattern recognition type optical memory and optical read/write device and method for reading and writing data from or to the memorySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 12, 2011·0 cites·22 claims
- 2253US7889552B2Non-volatile semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 15, 2011·2 cites·19 claims
- 2351US7439566B2Semiconductor memory device having metal-insulator transition film resistorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 21, 2008·0 cites·17 claims
- 2449US2008316807A1Semiconductor memory device having metal-insulator transition film resistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2548US7791942B2Methods of operating nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 7, 2010·1 cites·25 claims
- 2646US7585755B2Method of fabricating non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·0 cites·24 claims
- 2746US7332740B2Memory device having molecular adsorption layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·2 cites·19 claims
- 2845US7675786B2Method of operating a semiconductor memory device having a recessed control gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 9, 2010·0 cites·20 claims
- 2943US8050087B2Non-volatile memory device including block state confirmation cell and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 1, 2011·0 cites·20 claims
- 3043US2006289940A1Fin FET CMOS device, method of manufacturing the same, and memory including fin FET CMOS deviceHYUN JAE-WOONG·Filed 2006·Application pending·0 cites
- 3143US2013294158A1Multi-level cell memory devices and methods of storing data in and reading data from the memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3243US2008315285A1Non-volatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3342US7813185B2Nonvolatile memory device and method of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 12, 2010·0 cites·14 claims
- 3441US8000148B2Methods of operating nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 16, 2011·0 cites·17 claims
- 3541US2007296033A1Non-volatile memory device having four storage node films and methods of operating and manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3640US7577042B2Method of programming multi-level semiconductor memory device and multi-level semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 18, 2009·0 cites·20 claims
- 3740US2007018237A1Non-volatile memory device having fin-type channel region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3836US2012026790A1Non-volatile memory device including block state confirmation cell and method of operating the samePARK JU-HEE·Filed 2011·Application pending·0 cites
- 3936US2007183204A1NAND-type nonvolatile memory devices having common bit lines and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →