Inventor · disambiguated record
James Kimball
Also filed as: KIMBALL JAMES · KIMBALL JAMES P
19 granted patents·916 citations·filing 1995–2003
96Inventor score
Files withLSI LOGIC CORP19
Top patents by PatentIndex Score
19 records- 0195US6331468B1Formation of integrated circuit structure using one or more silicon layers for implantation and out-diffusion in formation of defect-free source/drain regions and also for subsequent formation of silicon nitride spacersLSI LOGIC CORP·Filed 1998·Granted Dec 18, 2001·295 cites·18 claims
- 0294US6087229AComposite semiconductor gate dielectricsLSI LOGIC CORP·Filed 1998·Granted Jul 11, 2000·180 cites·26 claims
- 0390US6413881B1Process for forming thin gate oxide with enhanced reliability by nitridation of upper surface of gate of oxide to form barrier of nitrogen atoms in upper surface region of gate oxide, and resulting productLSI LOGIC CORP·Filed 2000·Granted Jul 2, 2002·60 cites·10 claims
- 0490US6033998AMethod of forming variable thickness gate dielectricsLSI LOGIC CORP·Filed 1998·Granted Mar 7, 2000·96 cites·22 claims
- 0578US5963801AMethod of forming retrograde well structures and punch-through barriers using low energy implantsLSI LOGIC CORP·Filed 1996·Granted Oct 5, 1999·60 cites·14 claims
- 0672US5585286AImplantation of a semiconductor substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant subsequently implanted into the substrate to form P- LDD region of a PMOS deviceLSI LOGIC CORP·Filed 1995·Granted Dec 17, 1996·39 cites·16 claims
- 0771US6060375AProcess for forming re-entrant geometry for gate electrode of integrated circuit structureLSI LOGIC CORP·Filed 1996·Granted May 9, 2000·39 cites·13 claims
- 0863US7084408B1Vaporization and ionization of metals for use in semiconductor processingLSI LOGIC CORP·Filed 2003·Granted Aug 1, 2006·5 cites·23 claims
- 0962US5904551AProcess for low energy implantation of semiconductor substrate using channeling to form retrograde wellsLSI LOGIC CORP·Filed 1996·Granted May 18, 1999·28 cites·12 claims
- 1062US5654210AProcess for making group IV semiconductor substrate treated with one or more group IV elements to form one or more barrier regions capable of inhibiting migration of dopant materials in substrateLSI LOGIC CORP·Filed 1995·Granted Aug 5, 1997·28 cites·14 claims
- 1160US7323228B1Method of vaporizing and ionizing metals for use in semiconductor processingLSI LOGIC CORP·Filed 2003·Granted Jan 29, 2008·3 cites·23 claims
- 1259US5707888AOxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidationLSI LOGIC CORP·Filed 1995·Granted Jan 13, 1998·21 cites·24 claims
- 1356US5739580AOxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidationLSI LOGIC CORP·Filed 1997·Granted Apr 14, 1998·17 cites·8 claims
- 1454US6864141B1Method of incorporating nitrogen into metal silicate based dielectrics by energized nitrogen ion beamsLSI LOGIC CORP·Filed 2003·Granted Mar 8, 2005·4 cites·21 claims
- 1549US6849512B1Thin gate dielectric for a CMOS transistor and method of fabrication thereofLSI LOGIC CORP·Filed 2002·Granted Feb 1, 2005·4 cites·20 claims
- 1648US6180470B1FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elementsLSI LOGIC CORP·Filed 1996·Granted Jan 30, 2001·15 cites·42 claims
- 1744US5858864AProcess for making group IV semiconductor substrate treated with one or more group IV elements to form barrier region capable of inhibiting migration of dopant materials in substrateLSI LOGIC CORP·Filed 1997·Granted Jan 12, 1999·11 cites·7 claims
- 1841US5717238ASubstrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant forming P-LDD region of a PMOS deviceLSI LOGIC CORP·Filed 1996·Granted Feb 10, 1998·8 cites·16 claims
- 1934US6759337B1Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrateLSI LOGIC CORP·Filed 1999·Granted Jul 6, 2004·3 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →