Inventor · disambiguated record
Jangeun Lee
Also filed as: LEE JANGEUN
30 granted patents·11 pending applications·195 citations·filing 2009–2025
96Inventor score
Top patents by PatentIndex Score
41 records- 0198US9184375B1Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·36 cites·20 claims
- 0297US8692342B2Magnetic memory devices having a uniform perpendicular nonmagnetic metal rich anisotropy enhanced patternOH SECHUNG·Filed 2011·Granted Apr 8, 2014·41 cites·6 claims
- 0396US8345474B2Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 1, 2013·49 cites·20 claims
- 0495US9318695B2Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced patternOH SECHUNG·Filed 2015·Granted Apr 19, 2016·12 cites·4 claims
- 0591US9048412B2Magnetic memory devices including magnetic layers separated by tunnel barriersOH SECHUNG·Filed 2014·Granted Jun 2, 2015·9 cites·21 claims
- 0690US8445979B2Magnetic memory devices including magnetic layers separated by tunnel barriersOH SECHUNG·Filed 2010·Granted May 21, 2013·9 cites·38 claims
- 0787US11121309B2Magnetic memory devices including magnetic tunnel junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 14, 2021·2 cites·20 claims
- 0884US8847341B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 30, 2014·4 cites·17 claims
- 0983US8987850B2Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced patternOH SECHUNG·Filed 2014·Granted Mar 24, 2015·4 cites·9 claims
- 1079US8405173B2Magnetic memory devicesKIM WOOJIN·Filed 2011·Granted Mar 26, 2013·7 cites·20 claims
- 1178US8129806B2Magnetic memory deviceNAM KYUNGTAE·Filed 2010·Granted Mar 6, 2012·4 cites·11 claims
- 1277US9577181B2Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 21, 2017·2 cites·7 claims
- 1377US8852960B2Method of fabricating semiconductor device and apparatus for fabricating the sameKIM WOOJIN·Filed 2011·Granted Oct 7, 2014·1 cites·15 claims
- 1471US8445981B2Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the sameLIM WOO CHANG·Filed 2011·Granted May 21, 2013·4 cites·48 claims
- 1567US8575667B2Magnetic memory devices with thin conductive bridgesNAM KYUNGTAE·Filed 2012·Granted Nov 5, 2013·2 cites·5 claims
- 1666US12237324B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 1765US11588100B2Magnetic memory devices including magnetic tunnel junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 21, 2023·0 cites·18 claims
- 1864US9508924B2Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 29, 2016·2 cites·18 claims
- 1963US9559296B2Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 31, 2017·1 cites·17 claims
- 2063US9048417B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 2, 2015·0 cites·6 claims
- 2163US2025212395A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2262US9343660B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 17, 2016·0 cites·8 claims
- 2360US8435830B2Methods of fabricating semiconductor devicesJEONG JUNHO·Filed 2010·Granted May 7, 2013·1 cites·14 claims
- 2459US12349443B2Gate structures and semiconductor devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 2559US2024421070A1Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2658US8722211B2Magnetic memory devices and methods of manufacturing such magnetic memory devicesKIM WOOJIN·Filed 2010·Granted May 13, 2014·1 cites·13 claims
- 2758US8198102B2Methods of fabricating magnetic memory devices with thin conductive bridgesNAM KYUNGTAE·Filed 2009·Granted Jun 12, 2012·3 cites·13 claims
- 2858US2024258393A1Gate structures and semiconductor devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2958US2025248099A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3057US2013234269A1Magnetic memory devices including magnetic layers separated by tunnel barriersOH SECHUNG·Filed 2013·Application pending·0 cites
- 3156US2025107073A1Semiconductor devices including bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3255US2025132198A1Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3354US8310019B2Magnetic memory deviceNAM KYUNGTAE·Filed 2012·Granted Nov 13, 2012·1 cites·6 claims
- 3452US8785901B2Semiconductor devices having metal oxide patternsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 22, 2014·0 cites·10 claims
- 3551US2023178439A1Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3649US2022262738A1Integrated circuit chip including wiring structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 3747US2025329653A1Semiconductor device and manufacturing method of metal interconnection structureSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3846US11456332B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 27, 2022·0 cites·20 claims
- 3936US8648434B2Magnetic memory devicesKIM WOOJIN·Filed 2011·Granted Feb 11, 2014·0 cites·20 claims
- 4035US2016005791A1Method and system for providing a thin pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 4132US9799382B2Method for providing a magnetic junction on a substrate and usable in a magnetic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 24, 2017·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →